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The development of new electrochromic materials and devices, like smart windows, has an enormous impact on the energy efficiency of modern society. One of the crucial materials in this technology is nickel-oxide. Ni-deficient NiO shows anodic electrochromism whose mechanism is still under debate. Using DFT+U calculations, we show that Ni vacancy generation results in the formation of hole polarons localised at the two oxygens next to the vacancy. Upon Li insertion or injection of an extra electron into Ni-deficient NiO, one hole gets filled, and the hole bipolaron is converted into a hole polaron well-localized at one O atom. Furthermore, the calculated absorption coefficients demonstrate that Li insertion/extraction or rather the addition/removal of an extra electron into Ni-deficient NiO can lead to switching between the oxidized (colored) and the reduced (bleached) states. Hence, our results suggest a new mechanism of Ni-deficient NiO electrochromism not related to the Ni2+/Ni3+ transition but based on the formation and annihilation of hole polarons in oxygen p-states.
We describe the ground- and excited-state electronic structure of bulk MnO and NiO, two prototypical correlated electron materials, using coupled cluster theory with single and double excitations (CCSD). As a corollary, this work also reports the fir
We report an experimental and theoretical analysis of the sqrt(3)x sqrt(3)-R30 and 2x2 reconstructions on the NiO (111) surface combining transmission electron microscopy, x-ray photoelectron spectroscopy, and reasonably accurate density functional c
The physics of mutual interaction of phonon quasiparticles with electronic spin degrees of freedom, leading to unusual transport phenomena of spin and heat, has been a subject of continuing interests for decades. Understanding phonon properties in th
On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO$_{2-x}$) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC$_x$) at the surface during vacuum annealing at temperatures as low as 600 {deg}C is repo
In this study, the characteristics of nickel thin film deposited by remote plasma atomic layer deposition (RPALD) on p-type Si substrate and formation of nickel silicide using rapid thermal annealing were determined. Bis(1,4-di-isopropyl-1,3-diazabut