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Phase change memory (PCM) is one of the leading candidates for neuromorphic hardware and has recently matured as a storage class memory. Yet, energy and power consumption remain key challenges for this technology because part of the PCM device must be self-heated to its melting temperature during reset. Here, we show that this reset energy can be reduced by nearly two orders of magnitude by minimizing the pulse width. We utilize a high-speed measurement setup to probe the energy consumption in PCM cells with varying pulse width (0.3 to 40 nanoseconds) and uncover the power dissipation dynamics. A key finding is that the switching power (P) remains unchanged for pulses wider than a short thermal time constant of the PCM ($tau$$_t$$_h$ < 1 ns in 50 nm diameter device), resulting in a decrease of energy (E=P$tau$) as the pulse width $tau$ is reduced in that range. In other words, thermal confinement during short pulses is achieved by limiting the heat diffusion time. Our improved programming scheme reduces reset energy density below 0.1 nJ/$mu$m$^2$, over an order of magnitude lower than state-of-the-art PCM, potentially changing the roadmap of future data storage technology and paving the way towards energy-efficient neuromorphic hardware
Magnetic skyrmion is a promising building block for developing information storage and computing devices. It can be stabilized in a ferromagnetic thin film with the Dzyaloshinskii-Moriya interaction (DMI). The moving ferromagnetic skyrmion may show t
Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However, non-idealities
The understanding of how the sub-nanoscale exchange interaction evolves in macroscale correlations and ordered phases of matter, such as magnetism and superconductivity, requires to bridge the quantum and classical worlds. This monumental challenge h
We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and trailing edg
Artificial spin ice (ASI) are arrays on nanoscaled magnets that can serve both as models for frustration in atomic spin ice as well as for exploring new spin-wave-based strategies to transmit, process, and store information. Here, we exploit the intr