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In a recent paper published in this Journal, Khordad and collaborators [J Low Temp Phys (2018) 190:200] have studied the thermodynamics properties of a GaAs double ring-shaped quantum dot under external magnetic and electric fields. In that meritorious research the energy of system was obtained by solving the Schr{o}dinger equation. The radial equation was mapped into a confluent hypergeometric differential equation and the differential equation associated to $z$ coordinate was mapped into a biconfluent Heun differential equation. In this paper, it is pointed out a misleading treatment on the solution of the biconfluent Heun equation. It is shown that the energy $E_{z}$ can not be labeled with $n_{z}$ and this fact jeopardizes the results of this system. We calculate the partition function with the correct energy spectrum and recalculate the specific heat and entropy as a function of low and high temperatures.
We consider a double quantum dot in the Pauli blockade regime interacting with a nearby single spin. We show that under microwave irradiation the average electron occupations of the dots exhibit resonances that are sensitive to the state of the nearb
We propose to continuously monitor a charge qubit by utilizing a T-shaped double quantum dot detector, in which the qubit and double dot are arranged in such a unique way that the detector turns out to be particularly susceptible to the charge states
We investigate the thermoelectric properties of a T-shaped double quantum dot system described by a generalized Anderson Hamiltonian. The systems electrical conduction (G) and the fundamental thermoelectric parameters such as the Seebeck coefficient
Real-time detection of single electron tunneling through a T-shaped double quantum dot is simulated, based on a Monte Carlo scheme. The double dot is embedded in a dissipative environment and the presence of electrons on the double dot is detected wi
We develop a master equation approach to study the backaction of quantum point contact (QPC) on a double quantum dot (DQD) at zero bias voltage. We reveal why electrons can pass through the zero-bias DQD only when the bias voltage across the QPC exce