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We investigated the structural and magnetic properties of bare SrRuO$_3$ (SRO) ultra-thin films and SrRuO$_3$/SrIrO$_3$/SrZrO$_3$ (SRO/SIO/SZO: RIZ) trilayer heterostructures between 10 K and 80 K, by comparing macroscopic data using magneto-optical Kerr effect (MOKE) and magneto-transport (anomalous Hall effect: AHE), with nanoscale fingerprints when applying non-contact scanning force microscopy (nc-SFM) and magnetic force microscopy (MFM). SRO and RIZ ultra-thin films were epitaxially grown at 650C onto vicinal SrTiO$_3$ (100) single-crystalline substrates to a nominal thickness of 4 and 4/2/2 unit cells (uc), respectively. Our correlated analysis allows associating topographic sample features of overgrown individual layers to their residual magnetization, as is shown here to be relevant for interpreting the macroscopic AHE data. Although the hump-like features in the AHE suggest a magnetically extured skyrmion phase to exist around 55 K associated to the topological Hall effect (THE), both our MOKE and MFM data cannot support this theory. In contrast, our SFM/MFM local-scale analysis finds the local coercive field to be strongly dependent on the effective layer thickness and stoichiometry in both the SRO and RIZ samples, with huge impact on the local band-structure. In fact, it is these variations that in turn mimic a potential THE through anomalies in the AHE resistivity loops.
Although a cubic phase of Mn$_3$Ga with an antiferromagnetic order has been theoretically predicted, it has not been experimentally verified in a bulk or film form. Here, we report the structural, magnetic, and electrical properties of antiferromagne
We report low-temperature measurements of current-voltage characteristics for highly conductive Nb/Al-AlOx-Nb junctions with thicknesses of the Al interlayer ranging from 40 to 150 nm and ultra-thin barriers formed by diffusive oxidation of the Al su
The electronic and magnetic properties of transition metal dichalcogenides are known to be extremely sensitive to their structure. In this paper we study the effect of structure on the electronic and magnetic properties of mono- and bilayer $VSe_2$ f
Thin films of the ferromagnetic metal SrRuO3 (SRO) show a varying easy magnetization axis depending on the epitaxial strain and undergo a metal-to-insulator transition with decreasing film thickness. We have investigated the magnetic properties of SR
Amorphous molybdenum silicide compounds have attracted significant interest for potential device applications, particularly in single-photon detector. In this work, the temperature-dependent resistance and magneto-resistance behaviors were measured t