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By means of first principles schemes based on magnetically constrained density functional theory and on the band unfolding technique we study the effect of doping on the conducting behaviour of the Lifshitz magnetic insulator NaOsO3. Electron doping is treated realistically within a supercell approach by replacing sodium with magnesium at different concentrations. Our data indicate that by increasing carrier concentration the system is subjected to two types of transition: (i) insulator to bad metal at low doping and low temperature and (ii) bad metal to metal at high doping and/or high-temperature. The predicted doping-induced insulator to metal transition (MIT) has similar traits with the temperature driven MIT reported in the undoped compound. Both develops in an itinerant background and exhibit a coupled electronic and magnetic behaviour characterized by the gradual quenching of the (pseudo)-gap associated with an reduction of the local spin moment. Unlike the temperature-driven MIT, chemical doping induces substantial modifications of the band structure and the MIT cannot be fully described as a Lifshitz process.
The metal-insulator transition (MIT) is one of the most dramatic manifestations of electron correlations in materials. Various mechanisms producing MITs have been extensively considered, including the Mott (electron localization via Coulomb repulsion
The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion magnitude.
5d transition metal oxides offer new opportunities to test our understanding of the interplay of correlation effects and spin-orbit interactions in materials in the absence of a single dominant interaction. The subtle balance between solid-state inte
We investigate the metal-insulator transition (MIT) of the osmium pyrochlore oxide Cd2Os2O7 through transport and magnetization measurements. The MIT and a magnetic transition to the all-in/all-out (AIAO) order occur simultaneously at 227 K. We propo
On the basis of experimental thermoelectric power results and ab initio calculations, we propose that a metal-insulator transition takes place at high pressure (approximately 6 GPa) in MgV_2O_4.