ﻻ يوجد ملخص باللغة العربية
We have performed density functional theory calculation and tight binging analysis in order to investigate the mechanism for the giant Rashba-type spin splitting (RSS) observed in Bi/Ag(111). We find that local orbital angular momentum induces momentum and spin dependent charge distribution which results in spin-dependent hopping. We show that the spin-dependent interatomic-hopping in Bi/Ag(111) works as a strong effective field and induces the giant RSS, indicating that the giant RSS is driven by hopping, not by a uniform electric field. The effective field from the hopping energy difference amounts to be ~18 V/{AA}. This new perspective on the RSS gives us a hint for the giant RSS mechanism in general and should provide a strategy for designing new RSS materials by controlling spin-dependence of hopping energy between the neighboring atomic layers.
In inversion-asymmetric semiconductors, spin-orbit coupling induces a k-dependent spin splitting of valence and conduction bands, which is a well-known cause for spin decoherence in bulk and heterostructures. Manipulating nonequilibrium spin coherenc
Electric weak links, the term used for those parts of an electrical circuit that provide most of the resistance against the flow of an electrical current, are important elements of many nanodevices. Quantum dots, nanowires and nano-constrictions that
We demonstrate that the selective equal spin Andreev reflection (SESAR) spectroscopy can be used in STM experiments to distinguish the zero-energy Majorana quasiparticles from the ordinary fermionic states of the Rashba chain. Such technique, designe
Within an effective Dirac theory the low-energy dispersions of monolayer graphene in the presence of Rashba spin-orbit coupling and spin-degenerate bilayer graphene are described by formally identical expressions. We explore implications of this corr
The generation of spin current and spin polarization in 2DEG Rashba system is considered, in which the spin-orbital coupling (SOC) is modulated by an ac gate voltage. By using non-Abelian gauge field method, we show the presence of an additional elec