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We assess independently the impact of high-temperature substrate annealing and metal deposition conditions on the coherence of transmon qubits in the standard 2D circuit-QED architecture. We restrict our study to devices made with aluminum interdigital capacitors on sapphire substrates. We record more than an order-of-magnitude improvement in the relaxation time of devices made with an annealed substrate, independent of whether a conventional evaporator or molecular beam epitaxy chamber was used to deposit the aluminum. We also infer similar levels of flux noise and photon shot noise through dephasing measurements on these devices. Our results indicate that substrate annealing plays a primary role in fabricating low-loss qubits, consistent with the hypothesis that substrate-air and substrate-metal interfaces are essential factors limiting the qubit lifetimes in superconducting circuits.
We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ~ 60 mu s by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to lift-off aluminum deposited simultaneously with the Josephson j
Spins of negatively charged nitrogen-vacancy (NV$^-$) defects in diamond are among the most promising candidates for solid-state qubits. The fabrication of quantum devices containing these spin-carrying defects requires position-controlled introducti
We measure the coherence of a new superconducting qubit, the {em low-impedance flux qubit}, finding $T_2^* sim T_1 sim 1.5mu$s. It is a three-junction flux qubit, but the ratio of junction critical currents is chosen to make the qubits potential have
We have developed superconducting qubits based on NbN/AlN/NbN epitaxial Josephson junctions on Si substrates which promise to overcome the drawbacks of qubits based on Al/AlO$_{x}$/Al junctions. The all-nitride qubits have great advantages such as ch
Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic structure, both in