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Irradiation of a sharp tungsten tip by a femtosecond laser and exposed to a strong DC electric field led to gradual and reproducible surface modifications. By a combination of field emission microscopy and scanning electron microscopy, we observed asymmetric surface faceting with sub-ten nanometer high steps. The presence of well pronounced faceted features mainly on the laser-exposed side implies that the surface modification was driven by a laser-induced transient temperature rise -- on a scale of a couple of picoseconds -- in the tungsten tip apex. Moreover, we identified the formation of a nano-tip a few nanometers high located at one of the corners of a faceted plateau. The results of simulations emulating the experimental conditions, are consistent with the experimental observations. The presented conditions can be used as a new method to fabricate nano-tips of few nm height, which can be used in coherent electron pulses generation. Besides the direct practical application, the results also provide insight into the microscopic mechanisms of light-matter interaction. The apparent growth mechanism of the features may also help to explain the origin of enhanced electron field emission, which leads to vacuum arcs, in high electric-field devices such as radio-frequency particle accelerators.
We report on the oxidation of self-assembled silicene nanoribbons grown on the Ag(110) surface using Scanning Tunneling Microscopy and High-Resolution Photoemission Spectroscopy. The results show that silicene nanoribbons present a strong resistance
We study quasi-ballistic heat transfer through air between a hot nanometer-scale tip and a sample. The hot tip/surface configuration is widely used to perform nonintrusive confined heating. Using a Monte-Carlo simulation, we find that the thermal con
We study the role of gold droplets in the initial stage of nanowire growth via the vapor liquid solid method. Apart from serving as a collections center for growth species, the gold droplets carry an additional crucial role that necessarily precedes
The thermal decomposition of SiC surface provides, perhaps, the most promising method for the epitaxial growth of graphene on a material useful in the electronics platform. Currently, efforts are focused on a reliable method for the growth of large-a
We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obt