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A three-dimensional elemental carbon Kagome lattice (CKL), made of only fourfold coordinated carbon atoms, is proposed based on first-principles calculations. Despite the existence of 60{deg} bond angles in the triangle rings, widely perceived to be energetically unfavorable, the CKL is found to display exceptional stability comparable to that of C60. The system allows us to study the effects of triangular frustration on the electronic properties of realistic solids, and it demonstrates a metal-insulator transition from that of graphene to a direct gap semiconductor in the visible blue region. By minimizing s-p orbital hybridization, which is an intrinsic property of carbon, not only the band edge states become nearly purely frustrated p states, but also the band structure is qualitatively different from any known bulk elemental semiconductors. For example, the optical properties are similar to those of direct-gap semiconductors GaN and ZnO, whereas the effective masses are comparable or smaller than those of Si.
The flat band has attracted a lot of attention because it gives rise to many exotic phases, as recently demonstrated in magic angle twisted bilayer graphene. Here, based on first-principles calculations, we identify a metal-insulator transition in bo
We investigate the bias-induced insulator-metal transition in organic electronics devices, on the basis of the Su-Schrieffer-Heeger model combined with the non-equilibrium Greens function formalism. The insulator-metal transition is explained with th
The origin of ferromagnetic insulating state of La$_{7/8}$Sr$_{1/8}$MnO$_3$ is investigated. Based on the tight-binding model, it is shown that this state can be attributed to the Peierls instability arisen from the interplay of spin and orbital orde
Layered kagome-lattice 3d transition metals are emerging as an exciting platform to explore the frustrated lattice geometry and quantum topology. However, the typical kagome electronic bands, characterized by sets of the Dirac-like band capped by a p
The criticality of vacancy-induced metal-insulator transition (MIT) in graphene is investigated by Kubo-Greenwood formula with tight-binding recursion method. The critical vacancy concentration for the MIT is determined to be 0.053%. The scaling laws