ﻻ يوجد ملخص باللغة العربية
A three-dimensional strong-topological-insulator or -semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state degeneracies occur away from time-reversal-invariant momenta. The mirror-invariance of the system then becomes essential in protecting the existence of a surface Fermi surface. Here we show that such a case exists in the strong-topological-semimetal Bi$_4$Se$_3$. Angle-resolved photoemission spectroscopy and textit{ab initio} calculations reveal partial gapping of surface bands on the Bi$_2$Se$_3$-termination of Bi$_4$Se$_3$(111), where an 85 meV gap along $bar{Gamma}bar{K}$ closes to zero toward the mirror-invariant $bar{Gamma}bar{M}$ azimuth. The gap opening is attributed to an interband spin-orbit interaction that mixes states of opposite spin-helicity.
We construct the symmetric-gapped surface states of a fractional topological insulator with electromagnetic $theta$-angle $theta_{em} = frac{pi}{3}$ and a discrete $mathbb{Z}_3$ gauge field. They are the proper generalizations of the T-pfaffian state
Electron correlations amplify quantum fluctuations and, as such, they have been recognized as the origin of a rich landscape of quantum phases. Whether and how they lead to gapless topological states is an outstanding question, and a framework that a
The search for materials to support the Quantum Anomalous Hall Effect (QAHE) have recently centered on intrinsic magnetic topological insulators (MTIs) including MnBi$_2$Te$_4$ or heterostructures made up of MnBi$_2$Te$_4$ and Bi$_2$Te$_3$. While MnB
Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should
Bi2Te3 is a member of a new class of materials known as topological insulators which are supposed to be insulating in the bulk and conducting on the surface. However experimental verification of the surface states has been difficult in electrical tra