اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدEvidence for topological surface states in metallic single crystals of Bi2Te3
291
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Bi2Te3 is a member of a new class of materials known as topological insulators which are supposed to be insulating in the bulk and conducting on the surface. However experimental verification of the surface states has been difficult in electrical transport measurements due to a conducting bulk. We report low temperature magnetotransport measurements on single crystal samples of Bi2Te3. We observe metallic character in our samples and large and linear magnetoresistance from 1.5 K to 290 K with prominent Shubnikov-de Haas (SdH) oscillations whose traces persist upto 20 K. Even though our samples are metallic we are able to obtain a Berry phase close to the value of {pi} expected for Dirac fermions of the topological surface states. This indicates that we might have obtained evidence for the topological surface states in metallic single crystals of Bi2Te3. Other physical quantities obtained from the analysis of the SdH oscillations are also in close agreement with those reported for the topological surface states. The linear magnetoresistance observed in our sample, which is considered as a signature of the Dirac fermions of the surface states, lends further credence to the existence of topological surface states.
قيم البحث
اقرأ أيضاً
Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating
the dominance of topological surface states in magnetoconductivity. At high charge carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large, non-saturating magnetoresistance, and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magneto-electric sensors and memory devices.
Three-dimensional (3D) topological insulators (TIs) are new forms of quantum matter that are characterized by their insulating bulk state and exotic metallic surface state, which hosts helical Dirac fermions1-2. Very recently, BiTeCl, one of the pola
r semiconductors, has been discovered by angle-resolved photoemission spectroscopy to be the first strong inversion asymmetric topological insulator (SIATI). In contrast to the previously discovered 3D TIs with inversion symmetry, the SIATI are expected to exhibit novel topological phenomena, including crystalline-surface-dependent topological surface states, intrinsic topological p-n junctions, and pyroelectric and topological magneto-electric effects3. Here, we report the first transport evidence for the robust topological surface state in the SIATI BiTeCl via observation of Shubnikov-de Haas (SdH) oscillations, which exhibit the 2D nature of the Fermi surface and pi Berry phase. The n = 1 Landau quantization of the topological surface state is observed at B . 12 T without gating, and the Fermi level is only 58.8 meV above the Dirac point, which gives rise to small effective mass, 0.055me, and quite large mobility, 4490 cm2s-1. Our findings will pave the way for future transport exploration of other new topological phenomena and potential applications for strong inversion asymmetric topological insulators.
A three-dimensional strong-topological-insulator or -semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state degeneracies occur aw
ay from time-reversal-invariant momenta. The mirror-invariance of the system then becomes essential in protecting the existence of a surface Fermi surface. Here we show that such a case exists in the strong-topological-semimetal Bi$_4$Se$_3$. Angle-resolved photoemission spectroscopy and textit{ab initio} calculations reveal partial gapping of surface bands on the Bi$_2$Se$_3$-termination of Bi$_4$Se$_3$(111), where an 85 meV gap along $bar{Gamma}bar{K}$ closes to zero toward the mirror-invariant $bar{Gamma}bar{M}$ azimuth. The gap opening is attributed to an interband spin-orbit interaction that mixes states of opposite spin-helicity.
We construct the symmetric-gapped surface states of a fractional topological insulator with electromagnetic $theta$-angle $theta_{em} = frac{pi}{3}$ and a discrete $mathbb{Z}_3$ gauge field. They are the proper generalizations of the T-pfaffian state
and pfaffian/anti-semion state and feature an extended periodicity compared with their of integer topological band insulators counterparts. We demonstrate that the surface states have the correct anomalies associated with time-reversal symmetry and charge conservation.
Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should
remain coherent and significantly spin polarized at ambient temperatures. Here, we studied the coherence and spin-structure of the topological states on the surface of a model topological insulator, Bi2Se3, at elevated temperatures in spin and angle-resolved photoemission spectroscopy. We found an extremely weak broadening and essentially no decay of spin polarization of the topological surface state up to room temperature. Our results demonstrate that the topological states on surfaces of topological insulators could serve as a basis for room temperature electronic devices.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
