اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدTemperature induced Lifshitz transition in WTe2
120
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We use ultra-high resolution, tunable, VUV laser-based, angle-resolved photoemission spectroscopy (ARPES) and temperature and field dependent resistivity and thermoelectric power (TEP) measurements to study the electronic properties of WTe2, a compound that manifests exceptionally large, temperature dependent magnetoresistance. The temperature dependence of the TEP shows a change of slope at T=175 K and the Kohler rule breaks down above 70-140 K range. The Fermi surface consists of two electron pockets and two pairs of hole pockets along the X-Gamma-X direction. Upon increase of temperature from 40K, the hole pockets gradually sink below the chemical potential. Like BaFe2As2, WTe2 has clear and substantial changes in its Fermi surface driven by modest changes in temperature. In WTe2, this leads to a rare example of temperature induced Lifshitz transition, associated with the complete disappearance of the hole pockets. These dramatic changes of the electronic structure naturally explain unusual features of the transport data.
قيم البحث
اقرأ أيضاً
The nodal-line semimetals have attracted immense interest due to the unique electronic structures such as the linear dispersion and the vanishing density of states as the Fermi energy approaching the nodes. Here, we report temperature-dependent trans
port and scanning tunneling microscope (spectroscopy) (STM[S]) measurements on nodal-line semimetal ZrSiSe.Our experimental results and theoretical analyses consistently demonstrate that the temperature induces Lifshitz transitions at 80 and 106 K in ZrSiSe, which results in the transport anomalies at the same temperatures. More strikingly, we observe a V-shaped dip structure around Fermi energy from the STS spectrum at low temperature,which can be attributed to co-effect of the spin-orbit coupling and excitonic instability. Our observations indicate the correlation interaction may play an important role in ZrSiSe, which owns the quasi-two-dimensional electronic structures.
By means of first principles schemes based on magnetically constrained density functional theory and on the band unfolding technique we study the effect of doping on the conducting behaviour of the Lifshitz magnetic insulator NaOsO3. Electron doping
is treated realistically within a supercell approach by replacing sodium with magnesium at different concentrations. Our data indicate that by increasing carrier concentration the system is subjected to two types of transition: (i) insulator to bad metal at low doping and low temperature and (ii) bad metal to metal at high doping and/or high-temperature. The predicted doping-induced insulator to metal transition (MIT) has similar traits with the temperature driven MIT reported in the undoped compound. Both develops in an itinerant background and exhibit a coupled electronic and magnetic behaviour characterized by the gradual quenching of the (pseudo)-gap associated with an reduction of the local spin moment. Unlike the temperature-driven MIT, chemical doping induces substantial modifications of the band structure and the MIT cannot be fully described as a Lifshitz process.
We have systematically measured the transport properties in the layered rhodium oxide K$_{x}$RhO$_{2}$ single crystals ($0.5lesssim x lesssim 0.67$), which is isostructural to the thermoelectric oxide Na$_{x}$CoO$_{2}$. We find that below $x = 0.64$
the Seebeck coefficient is anomalously enhanced at low temperatures with increasing $x$, while it is proportional to the temperature like a conventional metal above $x=0.65$, suggesting an existence of a critical content $x^{*} simeq 0.65$. For the origin of this anomalous behavior, we discuss a filling-induced Lifshitz transition, which is characterized by a sudden topological change in the cylindrical hole Fermi surfaces at the critical content $x^*$.
Fermi surface is at the heart of our understanding of metals and strongly correlated many-body systems. An abrupt change in the Fermi surface topology, also called Lifshitz transition, can lead to the emergence of fascinating phenomena like colossal
magnetoresistance and superconductivity. While Lifshitz transitions have been demonstrated for a broad range of materials by equilibrium tuning of macroscopic parameters such as strain, doping, pressure and temperature, a non-equilibrium dynamical route toward ultrafast modification of the Fermi surface topology has not been experimentally demonstrated. Combining time-resolved multidimensional photoemission spectroscopy with state-of-the-art TDDFT+$U$ simulations, we introduce a novel scheme for driving an ultrafast Lifshitz transition in the correlated type-II Weyl semimetal T$mathrm{_{d}}$-MoTe$_{2}$. We demonstrate that this non-equilibrium topological electronic transition finds its microscopic origin in the dynamical modification of the effective electronic correlations. These results shed light on a novel ultrafast scheme for controlling the Fermi surface topology in correlated quantum materials.
The topological materials have attracted much attention recently. While three-dimensional topological insulators are becoming abundant, two-dimensional topological insulators remain rare, particularly in natural materials. ZrTe5 has host a long-stand
ing puzzle on its anomalous transport properties; its underlying origin remains elusive. Lately, ZrTe5 has ignited renewed interest because it is predicted that single-layer ZrTe5 is a two-dimensional topological insulator and there is possibly a topological phase transition in bulk ZrTe5. However, the topological nature of ZrTe5 is under debate as some experiments point to its being a three-dimensional or quasi-two-dimensional Dirac semimetal. Here we report high-resolution laser-based angle-resolved photoemission measurements on ZrTe5. The electronic property of ZrTe5 is dominated by two branches of nearly-linear-dispersion bands at the Brillouin zone center. These two bands are separated by an energy gap that decreases with decreasing temperature but persists down to the lowest temperature we measured (~2 K). The overall electronic structure exhibits a dramatic temperature dependence; it evolves from a p-type semimetal with a hole-like Fermi pocket at high temperature, to a semiconductor around ~135 K where its resistivity exhibits a peak, to an n-type semimetal with an electron-like Fermi pocket at low temperature. These results indicate a clear electronic evidence of the temperature-induced Lifshitz transition in ZrTe5. They provide a natural understanding on the underlying origin of the resistivity anomaly at ~135 K and its associated reversal of the charge carrier type. Our observations also provide key information on deciphering the topological nature of ZrTe5 and possible temperature-induced topological phase transition.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
