ترغب بنشر مسار تعليمي؟ اضغط هنا

Moir{e} patterns as a probe of interplanar interactions: graphene on h-BN

93   0   0.0 ( 0 )
 نشر من قبل Annalisa Fasolino
 تاريخ النشر 2014
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

By atomistic modeling of moir{e} patterns of graphene on a substrate with a small lattice mismatch, we find qualitatively different strain distributions for small and large misorientation angles, corresponding to the commensurate-incommensurate transition recently observed in graphene on hexagonal BN. We find that the ratio of C-N and C-B interactions is the main parameter determining the different bond lengths in the center and edges of the moir{e} pattern. Agreement with experimental data is obtained only by assuming that the C-B interactions are at least twice weaker than the C-N interactions. The correspondence between the strain distribution in the nanoscale moir{e} pattern and the potential energy surface at the atomic scale found in our calculations, makes the moir{e} pattern a tool to study details of dispersive forces in van der Waals heterostructures.



قيم البحث

اقرأ أيضاً

Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers. Nevertheless, subt le effects may arise due to the differing lattice constants of graphene and hBN, and due to the twist angle between the graphene and hBN lattices. Here, we use a recently developed model which allows us to perform band structure and magnetotransport calculations of such structures, and show that with a proper account of the moire physics an excellent agreement with experiments can be achieved, even for complicated structures such as disordered graphene, or antidot lattices on a monolayer hBN with a relative twist angle. Calculations of this kind are essential to a quantitative modeling of twistronic devices.
The application of the chiral decomposition procedure to hybrid graphene h-BN systems revealed rules for the partition of the system into effective subsystems being bilayers plus monolayer in case the number of layers is odd. Three types of subsystem s have been detected namely purely graphene bilayers and monolayers, mixed bilayers and pure h-BN monolayers depending on the hybrid composition. The effective parameters characterizing these chiral subsystems consist of the interlayer couplings and on-site potentials which shows the mechanism of compensation of the asymmetry introduced into the system by h-BN layers. For illustration, we provide a pedagogical overview about chiral tunneling in graphene subsystems (MLG, BLG) present in hybrid with one h-BN layer. We have established the parameter ranges for which the characteristic features in the spectrum are observed, such as Fabry-Perot resonances in the case of MLG and magic angles in the case of effective BLG. We also consider different hybrid stacking in order to indicate effective systems with the desired properties required in the electronic and spintronic applications.
We report on gate hysteresis in resistance on high quality graphene/h-BN devices. We observe a thermal activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375K. In order to investigate the origi n of the hysteretic phenomenon, we design heterostructures involving graphene/h-BN devices with different underlying substrates such as: SiO2/Si and graphite; where heavily doped silicon and graphite are used as a back gate electrodes, respectively. The gate hysteretic behavior of the resistance shows to be present only in devices with an h-BN/SiO2 interface and is dependent on the orientation of the applied gate electric field and sweep rate. Finally, we suggest a phenomenological model, which captures all of our findings based on charges trapped at the h-BN/SiO2. Certainly, such hysteretic behavior in graphene resistance represents a technological problem for the application of graphene devices at high temperatures, but conversely, it can open new routes for applications on digital electronics and graphene memory devices.
Electrochemical intercalation is a powerful method for tuning the electronic properties of layered solids. In this work, we report an electro-chemical strategy to controllably intercalate lithium ions into a series of van der Waals (vdW) heterostruct ures built by sandwiching graphene between hexagonal boron nitride (h-BN). We demonstrate that encapsulating graphene with h-BN eliminates parasitic surface side reactions while simultaneously creating a new hetero-interface that permits intercalation between the atomically thin layers. To monitor the electrochemical process, we employ the Hall effect to precisely monitor the intercalation reaction. We also simultaneously probe the spectroscopic and electrical transport properties of the resulting intercalation compounds at different stages of intercalation. We achieve the highest carrier density $> 5 times 10^{13} cm^{-2}$ with mobility $> 10^3 cm^2/(Vs)$ in the most heavily intercalated samples, where Shubnikov-de Haas quantum oscillations are observed at low temperatures. These results set the stage for further studies that employ intercalation in modifying properties of vdW heterostructures.
The unique capabilities of capacitance measurements in bilayer graphene enable probing of layer-specific properties that are normally out of reach in transport measurements. Furthermore, capacitance measurements in the top-gate and penetration field geometries are sensitive to different physical quantities: the penetration field capacitance probes the two layers equally, whereas the top gate capacitance preferentially samples the near layer, resulting in the near-layer capacitance enhancement effect observed in recent top-gate capacitance measurements. We present a detailed theoretical description of this effect and show that capacitance can be used to determine the equilibrium layer polarization, a potentially useful tool in the study of broken symmetry states in graphene.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا