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Previously observed non-Arrhenius behavior in fast ion conducting glasses [textit{Phys. Rev. Lett.} textbf{76}, 70 (1996)] occurs at temperatures near the glass transition temperature, $T_{g}$, and is attributed to changes in the ion mobility due to ion trapping mechanisms that diminish the conductivity and result in a decreasing conductivity with increasing temperature. It is intuitive that disorder in glass will also result in a distribution of the activation energies (DAE) for ion conduction, which should increase the conductivity with increasing temperature, yet this has not been identified in the literature. In this paper, a series of high precision ionic conductivity measurements are reported for $0.5{Na}_{2}{S}+0.5[x{GeS}_{2}+(1-x){PS}_{5/2}]$ glasses with compositions ranging from $0 leq x leq 1$. The impact of the cation site disorder on the activation energy is identified and explained using a DAE model. The absence of the non-Arrhenius behavior in other glasses is explained and it is predicted which glasses are expected to accentuate the DAE effect on the ionic conductivity.
A major challenge in the modeling of ionically conducting glasses is to understand how the large variety of possible chemical compositions and specific structural properties influence ionic transport quantities. Here we revisit and extend a theoretic
It is generally believed that the intrinsic properties of glasses are intimately related to potential energy landscapes (PELs). However, little is known about the PELs of glasses below the glass transition temperature (T_g). Taking advantage of lower
Here we report on measurements of the spin-Seebeck effect of GaMnAs over an extended temperature range alongside the thermal conductivity, specific heat, magnetization, and thermoelectric power. The amplitude of the spin-Seebeck effect in GaMnAs scal
The $10$ GHz microwave conductivity, $sigma(T)$ and high field, $222$ GHz electron spin resonance (HF-ESR) of Li$_4$C$_{60}$ fulleride is measured in a wide temperature range. We suggest that the majority of ESR active sites and at least some of the
Thouless quantization of adiabatic particle transport permits to associate an integer topological charge with each atom of an electronically gapped material. If these charges are additive and independent of atomic positions, they provide a rigorous d