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Low-energy continuous states of electron in heterosrtucture with periodically placed quantum-dot sheets are studied theoretically. The Greens function of electron is governed by the Dyson equation with the self-energy function which is determined the boundary conditions at quantum-dot sheets with weak damping in low-energy region. The parameters of superlattice formed by quantum-dot sheets are determined using of the short-range model of quantum dot. The density of states and spectral dependencies of the anisotropic absorption coefficient under mid-IR transitions from doped quantum dots into miniband states of superlattice strongly depend on dot concentration and on period of sheets. These dependencies can be used for characterization of the multi-layer structure and they determine parameters of different optoelectronic devices exploiting vertical transport of carriers through quantum-dot sheets.
Low-energy electronic states in heterosrtuctures formed by ultranarrow layer (single or several monolayers thickness) are studied theoretically. The host material is described within the effective mass approximation and effect of ultranarrow layers i
Starting from the numerical solution of the 6-band textbf{k.p} description of a lattice-mismatched ellipsoidal quantum dot situated inside a nanowire, including a spin Zeeman effect with values appropriate to a dilute magnetic semiconductor, we propo
Lateral quantum dot molecules consist of at least two closely-spaced InGaAs quantum dots arranged such that the axis connecting the quantum dots is perpendicular to the growth direction. These quantum dot complexes are called molecules because the sm
We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments
We consider the dephasing rate of an electron level in a quantum dot, placed next to a fluctuating edge current in the fractional quantum Hall effect. Using perturbation theory, we show that this rate has an anomalous dependence on the bias voltage a