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We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the second Landau level. We apply this technique to several samples of vastly different densities and grown in different MBE chambers. Excellent agreement is found between the estimated intrinsic and numerically obtained energy gaps for the $ u=5/2$ fractional quantum Hall state. Futhermore, we quantify, for the first time, the dependence of the intrinsic gap at $ u=5/2$ on Landau level mixing.
We study the nature of the u=5/2 quantum Hall state in wide quantum wells under the mixing of electronic subbands and Landau levels. We introduce a general method to analyze the Moore-Read Pfaffian state and its particle-hole conjugate, the anti-Pfa
We report quantitative measurements of the impact of alloy disorder on the $ u=5/2$ fractional quantum Hall state. Alloy disorder is controlled by the aluminum content $x$ in the Al$_x$Ga$_{1-x}$As channel of a quantum well. We find that the $ u=5/2$
We investigate the nature of the fractional quantum Hall (FQH) state at filling factor $ u=13/5$, and its particle-hole conjugate state at $12/5$, with the Coulomb interaction, and address the issue of possible competing states. Based on a large-scal
We investigate the finite frequency noise of a quantum point contact at filling factor { u} = 5/2 using a weakly coupled resonant LC circuit as a detector. We show how one could spectroscopically address the fractional charged excitations inspecting
We compare the energy gap of the u=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect