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We report quantitative measurements of the impact of alloy disorder on the $ u=5/2$ fractional quantum Hall state. Alloy disorder is controlled by the aluminum content $x$ in the Al$_x$Ga$_{1-x}$As channel of a quantum well. We find that the $ u=5/2$ state is suppressed with alloy scattering. To our surprise, in samples with alloy disorder the $ u=5/2$ state appears at significantly reduced mobilities when compared to samples in which alloy disorder is not the dominant scattering mechanism. Our results highlight the distinct roles of the different types of disorder present in these samples, such as the short-range alloy and the long-range Coulomb disorder.
We report on results of numerical studies of the spin polarization of the half filled second Landau level, which corresponds to the fractional quantum Hall state at filling factor $ u=5/2$. Our studies are performed using both exact diagonalization a
We compare the energy gap of the u=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect
The fractional quantum Hall (FQH) effect at filling factor v = 5/2 has recently come under close scrutiny, as it may possess quasi-particle excitations obeying nonabelian statistics, a property sought for topologically protected quantum operations. Y
Using a 50-nm width, ultra-clean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor $ u = 5/2$ fractional quantum Hall effect in a perpendicular magnetic field $B sim$ 1.7 T and determined its dependence on tilted magnetic fiel
We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the second Landau level. We apply this technique to several samples of vast