اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدParametric oscillator based on non-linear vortex dynamics in low resistance magnetic tunnel junctions
97
0
0.0
(
0
)
تأليف
S. Martin
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Radiofrequency vortex spin-transfer oscillators based on magnetic tunnel junctions with very low resistance area product were investigated. A high power of excitations has been obtained characterized by a power spectral density containing a very sharp peak at the fundamental frequency and a series of harmonics. The observed behaviour is ascribed to the combined effect of spin transfer torque and Oersted-Amp`ere field generated by the large applied dc-current. We furthermore show that the synchronization of a vortex oscillation by applying a ac bias current is mostly efficient when the external frequency is twice the oscillator fundamental frequency. This result is interpreted in terms of a parametric oscillator.
قيم البحث
اقرأ أيضاً
Frequency modulation experiments were performed on a spin torque vortex oscillator for a wide range of modulation frequency, up to 10 % of the oscillator frequency. A thorough analysis of the intermodulation products shows that the key parameter that
describes these experiments is the deviation sensitivity, which is the dynamical frequency-current dependence. It differs significantly from the oscillator tunability discussed so far in the context of spin-transfer oscillators. The essential difference between these two concepts is related to the response time of the vortex oscillator, driven either in quasi-steady state or in a transient regime.
Magnetic tunnel junctions are nanoscale spintronic devices with microwave generation and detection capabilities. Here we use the rectification effect called spin-diode in a magnetic tunnel junction to wirelessly detect the microwave emission of anoth
er junction in the auto-oscillatory regime. We show that the rectified spin-diode voltage measured at the receiving junction end can be reconstructed from the independently measured auto-oscillation and spin diode spectra in each junction. Finally we adapt the auto-oscillator model to the case of spin-torque oscillator and spin-torque diode and we show that accurately reproduces the experimentally observed features. These results will be useful to design circuits and chips based on spintronic nanodevices communicating through microwaves.
The quantum mechanical tunnelling process conserves the quantum properties of the particle considered. As applied to solid-state tunnelling (SST), this physical law was verified, within the field of spintronics, regarding the electron spin in early e
xperiments across Ge tunnel barriers, and in the 90s across Al2O3 barriers. The conservation of the quantum parameter of orbital occupancy, as grouped into electronic symmetries, was observed in the 00s across MgO barriers, followed by SrTiO3 (STO). Barrier defects, such as oxygen vacancies, partly conserve this electronic symmetry. In the solid-state, an additional subtlety is the sign of the charge carrier: are holes or electrons involved in transport? We demonstrate that SST across MgO magnetic tunnel junctions (MTJs) with a large resistance-area (RA) product involves holes by examining how shifting the MTJs Fermi level alters the ensuing barrier heights defined by the barriers oxygen vacancies. In the process, we consolidate the description of tunnel barrier heights induced by specific oxygen-vacancy induced localized states. Our work opens prospects to understand the concurrent observation of high TMR and spin transfer torque across MgO-based nanopillars.
We theoretically study the recently observed tunnel-barrier-enhanced dc voltage signals generated by magnetization precession in magnetic tunnel junctions. While the spin pumping is suppressed by the high tunneling impedance, two complimentary proces
ses are predicted to result in a sizable voltage generation in ferromagnet (F)|insulator (I)|normal-metal (N) and F|I|F junctions, with one ferromagnet being resonantly excited. Magnetic dynamics in F|I|F systems induces a robust charge pumping, translating into voltage in open circuits. In addition, dynamics in a single ferromagnetic layer develops longitudinal spin accumulation inside the ferromagnet. A tunnel barrier then acts as a nonintrusive probe that converts the spin accumulation into a measurable voltage. Neither of the proposed mechanisms suffers from spin relaxation, which is typically fast on the scale of the exponentially slow tunneling rates. The longitudinal spin-accumulation buildup, however, is very sensitive to the phenomenological ingredients of the spin-relaxation picture.
Modulation of a spin-torque oscillator (STO) signal based on a magnetic tunnel junction (MTJ) with perpendicularly magnetized free layer is investigated. Magnetic field inductive loop was created during MTJ fabrication process, which enables microwav
e field application during STO operation. The frequency modulation by the microwave magnetic field of up to 3 GHz is explored, showing a potential for application in high-data-rate communication technologies. Moreover, an inductive loop is used for self-synchronization of the STO signal, which after field-locking exhibits significant improvement of the linewidth and oscillation power.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
