ترغب بنشر مسار تعليمي؟ اضغط هنا

Skin layer of BiFeO3 single crystals

299   0   0.0 ( 0 )
 نشر من قبل Xavier Marti
 تاريخ النشر 2010
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

A surface layer (skin) that is functionally and structurally different from the bulk was found in single crystals of BiFeO3. Impedance analysis indicates that a previously reported anomaly at T* ~ 275 pm 5 ^/circC corresponds to a phase transition confined at the surface of BiFeO3. X-ray photoelectron spectroscopy and X-ray diffraction as a function of both incidence angle and photon wavelength unambiguously confirm the existence of a skin with an estimated skin depth of few nanometres, elongated out-of-plane lattice parameter, and lower electron density. Temperature-dependent x-ray diffraction has revealed that the skins out of plane lattice parameter changes abruptly at T*, while the bulk preserves an unfeatured linear thermal expansion. The distinct properties of the skin are likely to dominate in large surface to volume ratios scenarios such as fine grained ceramics and thin films, and should be particularly relevant for electronic devices that rely on interfacial couplings such as exchange bias.



قيم البحث

اقرأ أيضاً

Interlayer excitons are observed coexisting with intralayer excitons in bi-layer, few-layer, and bulk MoSe2 single crystals by confocal reflection contrast spectroscopy. Quantitative analysis using the Dirac-Bloch-Equations provides unambiguous state assignment of all the measured resonances. The interlayer excitons in bilayer MoSe2 have a large binding energy of 153 meV, narrow linewidth of 20 meV, and their spectral weight is comparable to the commonly studied higher-order intralayer excitons. At the same time, the interlayer excitons are characterized by distinct transition energies and permanent dipole moments providing a promising high temperature and optically accessible platform for dipolar exciton physics.
Bismuth ferrite, BiFeO3, is the only known room-temperature multiferroic material. We demonstrate here, using neutron scattering measurements in high quality single crystals, that the antiferromagnetic and ferroelectric orders are intimately coupled. Initially in a single ferroelectric state, our crystals have a canted antiferromagnetic structure describing a unique cycloid. Under electrical poling, polarisation re-orientation induces a spin flop. We argue here that the coupling between the two orders may be stronger in the bulk than that observed in thin films where the cycloid is absent.
We discuss the first infrared reflectivity measurement on a BiFeO3 single crystal between 5 K and room temperature. The 9 predicted ab-plane E phonon modes are fully and unambiguously determined. The frequencies of the 4 A1 c-axis phonons are found. These results settle issues between theory and data on ceramics. Our findings show that the softening of the lowest frequency E mode is responsible for the temperature dependence of the dielectric constant, indicating that the ferroelectric transition in BiFeO3 is soft-mode driven.
Using first-principles density functional theory calculations, we investigate a family of stable two-dimensional crystals with chemical formula $A_2B_2$, where $A$ and $B$ belong to groups IV and V, respectively ($A$ = C, Si, Ge, Sn, Pb; $B$ = N, P, As, Sb, Bi). Two structural symmetries of hexagonal lattices $Pbar{6}m2$ and $Pbar{3}m1$ are shown to be dynamically stable, named as $alpha$- and $beta$-phases correspondingly. Both phases have similar cohesive energies, and the $alpha$-phase is found to be energetically favorable for structures except CP, CAs, CSb and CBi, for which the $beta$-phase is favored. The effects of spin-orbit coupling and Hartree-Fock corrections to exchange-correlation are included to elucidate the electronic structures. All structures are semiconductors except CBi and PbN, which have metallic character. SiBi, GeBi and SnBi have direct band gaps, whereas the remaining semiconductor structures have indirect band gaps. All structures have quartic dispersion in their valence bands, some of which make the valence band maximum and resemble a Mexican hat shape. SnAs and PbAs have purely quartic valence band edges, i.e. $E{sim}{-}alpha k^4$, a property reported for the first time. The predicted materials are candidates for a variety of applications. Owing to their wide band gaps, CP, SiN, SiP, SiAs, GeN, GeP can find their applications in optoelectronics. The relative band positions qualify a number of the structures as suitable for water splitting, where CN and SiAs are favorable at all pH values. Structures with quartic band edges are expected to be efficient for thermoelectric applications.
Two-dimensional molecular crystals have been beyond the reach of systematic investigation because of the lack or instability of their well-defined forms. Here, we demonstrate drastically enhanced photostability and Davydov splitting in single and few -layer tetracene (Tc) crystals sandwiched between inorganic 2D crystals of graphene or hexagonal BN. Molecular orientation and long-range order mapped with polarized wide-field photoluminescence imaging and optical second-harmonic generation revealed high crystallinity of the 2D Tc and its distinctive orientational registry with the 2D inorganic crystals, which were also verified with first-principles calculations. The reduced dielectric screening in 2D space was manifested by enlarged Davydov splitting and attenuated vibronic sidebands in the excitonic absorption and emission of monolayer Tc crystals. Photostable 2D molecular crystals and their size effects will lead to novel photophysical principles and photonic applications.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا