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Aging effects in the relaxations of conductivity of a two-dimensional electron system in Si have been studied as a function of carrier density. They reveal an abrupt change in the nature of the glassy phase at the metal-insulator transition (MIT): (a) while full aging is observed in the insulating regime, there are significant departures from full aging on the metallic side of the MIT, before the glassy phase disappears completely at a higher density $n_g$; (b) the amplitude of the relaxations peaks just below the MIT, and it is strongly suppressed in the insulating phase. Other aspects of aging, including large non-Gaussian noise and similarities to spin glasses, also have been discussed.
A wide range of disordered materials, including disordered correlated systems, show Universal Dielectric Response (UDR), followed by a superlinear power-law increase in their optical responses over exceptionally broad frequency regimes. While extensi
The temperature dependence of conductivity $sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density $n_c(0)$, a
The relaxations of conductivity have been studied in the glassy regime of a strongly disordered two-dimensional electron system in Si after a temporary change of carrier density during the waiting time t_w. Two types of response have been observed: a
It is well-known that magnetic impurities can change the symmetry class of disordered metallic systems by breaking spin and time-reversal symmetry. At low temperature these symmetries can be restored by Kondo screening. It is also known that at the A
We present results from an experimental study of the equilibrium and non-equilibrium transport properties of vanadium oxide nanobeams near the metal-insulator transition (MIT). Application of a large electric field in the insulating phase across the