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We have synthesized, crystallized and studied the structural and electric transport properties of organic molecular crystals based on a rubrene derivative with {em t}-butyl sidegroups at the 5,11 positions. Two crystalline modifications are observed: one (A) distinct from that of rubrene with larger spacings between the naphtacene backbones, the other (B) with a in-plane structure presumably very similar compared to rubrene. The electric transport properties reflect the different structures: in the latter phase (B) the in-plane hole mobility of 12 cm$^2$/Vs measured on single crystal FETs is just as high as in rubrene crystals, while in the A phase no field-effect could be measured. The high crystal quality, studied in detail for B, reflects itself in the density of gap states: The deep-level trap density as low as $10^{15}$ cm$^{-3}$ eV$^{-1}$ has been measured, and an exponential band tail with a characteristic energy of 22 meV is observed. The bulk mobility perpendicular to the molecular planes is estimated to be of order of $10^{-3}$ -- $10^{-1}$ cm$^2$/Vs.
Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nanotubes as a function of carrier density and electric field, for differ
The density of trap states in the bandgap of semiconducting organic single crystals has been measured quantitatively and with high energy resolution by means of the experimental method of temperature-dependent space-charge-limited-current spectroscop
The formation of polarons due to the interaction between charge carriers and the crystal lattice has been proposed to have wide-ranging effects on charge carrier dynamics in lead--halide perovskites (LHPs). The hypothesis underlying many of those pro
We report on the temperature dependence of the mobility, $mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$times10^{12}$ cm$^{-2}$ to 3.0$times10^{12}$ cm$^{-2}$
We discovered that perovskite (Ba,La)SnO3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba0.98La0.02SnO3 crystals with the n-type carrier concentration of sim 8-10times10 19 cm-3 is found to be sim 103 cm