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تسجيل مستخدم جديدAcoustic phonon scattering in a low density, high mobility AlGaN/GaN field effect transistor
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E. A. Henriksen
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We report on the temperature dependence of the mobility, $mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$times10^{12}$ cm$^{-2}$ to 3.0$times10^{12}$ cm$^{-2}$ and a peak mobility of 80,000 cm$^{2}$/Vs. Between 20 K and 50 K we observe a linear dependence $mu_{ac}^{-1} = alpha$T indicating that acoustic phonon scattering dominates the temperature dependence of the mobility, with $alpha$ being a monotonically increasing function of decreasing 2D electron density. This behavior is contrary to predictions of scattering in a degenerate electron gas, but consistent with calculations which account for thermal broadening and the temperature dependence of the electron screening. Our data imply a deformation potential D = 12-15 eV.
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