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Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the systems valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the quadrant where the system is both spin- and valley-polarized. This observation establishes the equivalent roles of spin and valley degrees of freedom in the 2D metal-insulator transition.
We report the observation of a re-entrant insulator--metal--insulator transition at B=0 in a two dimensional (2D) hole gas in GaAs at temperatures down to 30mK. At the lowest carrier densities the holes are strongly localised. As the carrier density
Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal-ins
The discovery of novel phases of matter is at the core of modern physics. In quantum materials, subtle variations in atomic-scale interactions can induce dramatic changes in macroscopic properties and drive phase transitions. Despite their importance
We explore the scaling description for a two-dimensional metal-insulator transition (MIT) of electrons in silicon. Near the MIT, $beta_{T}/p = (-1/p)d(ln g)/d(ln T)$ is universal (with $p$, a sample dependent exponent, determined separately; $g$--con
The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD) measurements. This