اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدNumerical Study of Spin Hall Transport in a Two Dimensional Hole Gas System
104
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We present a numerical study of the spin Hall effect in a two-dimensional hole gas (2DHG) system in the presence of disorder. We find that the spin Hall conductance (SHC), extrapolated to the thermodynamic limit, remains finite in a wide range of disorder strengths for a closed system on torus. But there is no intrinsic spin Hall accumulation as induced by an external electric field once the disorder is turned on. The latter is examined by performing a Laughlins Gedanken gauge experiment numerically with the adiabatical insertion of a flux quantum in a belt-shaped sample, in which the absence of level crossing is found under the disorder effect. Without disorder, on the other hand, energy levels do cross each other, which results in an oscillating spin-density-modulation at the sample boundary after the insertion of one flux quantum in the belt-shaped system. But the corresponding net spin transfer is only about one order of magnitude smaller than what is expected from the bulk SHC. These apparently contradictory results can be attributed to the violation of the spin conservation law in such a system. We also briefly address the dissipative Fermi surface contribution to spin polarization, which may be relevant to experimental measurements.
قيم البحث
اقرأ أيضاً
We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature dependence
of the resistance is either power-like or simply activated. The noise decreases when the temperature or the density increase. These results contradict the standard description of independent particles in the strong localization regime. On the contrary, they agree with the percolation picture suggested by higher density results. The physical nature of the system could be a mixture of a conducting and an insulating phase. We compare our results with those of composite thin films.
Magnetotransport measurements in combination with molecular dynamics (MD) simulations on two-dimensional disordered Lorentz gases in the classical regime are reported. In quantitative agreement between experiment and simulation, the magnetoconductivi
ty displays a pronounced peak as a function of perpendicular magnetic field $B$ which cannot be explained in the framework of existing kinetic theories. We show that this peak is linked to the onset of a directed motion of the electrons along the contour of the disordered obstacle matrix when the cyclotron radius becomes smaller than the size of the obstacles. This directed motion leads to transient superdiffusive motion and strong scaling corrections in the vicinity of the insulator-to-conductor transitions of the Lorentz gas.
The conductivity of an electron gas can be alternatively calculated either from the current--current or from the density--density correlation function. Here, we compare these two frequently used formulations of the Kubo formula for the two--dimension
al Dirac electron gas by direct evaluations for several special cases. Assuming the presence of weak disorder we investigate perturbatively both formulas at and away from the Dirac point. While to zeroth order in the disorder amplitude both formulations give identical results, with some very strong assumptions though, they show significant discrepancies already in first order. At half filling we evaluate all second order diagrams. Virtually none of the topologically identical diagrams yield the same corrections for both formulations. We conclude that a direct comparison of conductivities of disordered system calculated in both formulas is not possible.
Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility GaAs quant
um wells, at densities below that of the metal-insulator transition (MIT) at zero magnetic field. Two techniques voltage and current fluctuations were used. The normalized noise power SR/R2 increases strongly when the hole density or the temperature are decreased. The temperature dependence is steeper at the lowest densities. This contradicts the predictions of the modulation approach in the strong localization hopping transport regime. The hypothesis of a second order phase transition or percolation transition at a density below that of the MIT is thus reinforced.
The interaction between a single hole and a two-dimensional, paramagnetic, homogeneous electron gas is studied using diffusion quantum Monte Carlo simulations. Calculations of the electron-hole correlation energy, pair-correlation function, and the e
lectron-hole center-of-mass momentum density are reported for a range of electron--hole mass ratios and electron densities. We find numerical evidence of a crossover from a collective Mahan exciton to a trion-dominated state in a density range in agreement with that found in recent experiments on quantum well heterostructures.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
