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تسجيل مستخدم جديدEffect of damage by 2-MeV He ions on the normal and superconducting properties of magnesium diboride
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We have studied the effect of damage induced by 2-MeV alpha particles on the critical temperature, Tc, and resistivity of MgB2 thin films. This technique allows defects to be controllably introduced into MgB2 in small successive steps. Tc decreases linearly as the intragrain resistivity at 40 K increases, while the intergrain connectivity is not changed. Tc is ultimately reduced to less than 7 K and we see no evidence for a saturation of Tc at about 20 K, contrary to the predictions of the Tc of MgB2 in the dirty limit of interband scattering.
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The effect of damage induced by 2-MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity, and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a
linear decrease in Tc with residual resistivity, and produces maxima in both Hc2(0)-perpendicular and Hc2(0)-parallel. Below Tcs of about 25 K, Hc2(0) depends roughly linearly on Tc, while the anisotropy of Hc2(0) decreases as Tc decreases. Annealing the films reproduces the Tc vs. residual resistivity dependence but not the Hc2(0) values induced by damage.
Magnesium diboride bulk pellets were fabricated from pre-reacted MgB2 powder ball milled with different amounts of exposure to air. Evidence of increased electron scattering including increased resistivity, depressed Tc, and enhanced Hc2 of the mille
d and heat treated samples were observed as a result of increased contact with air. These and other data were consistent with alloying with carbon as a result of exposure to air. A less clear trend of decreased connectivity associated with air exposure was also observed. In making the case that exposure to air should be considered a doping process, these results may explain the wide varibability of undoped MgB2 properties extant in the literature.
Oxygen was systematically incorporated in MBE grown MgB2 films using in-situ post-growth anneals in an oxygen environment. Connectivity analysis in combination with measurements of the critical temperature and resistivity indicate that oxygen is dist
ributed both within and between the grains. High values of critical current densities in field (~4x10^5 A/cm^2 at 8 T and 4.2 K), extrabolated critical fields (>45 T) and slopes of critical field versus temperature (1.4 T/K) are observed. Our results suggest that low growth temperatures (300oC) and oxygen doping (>0.65%) can produce MgB2 with high Jc values in field and Hc2 for high-field magnet applications.
We report the fabrication of a directly coupled superconducting quantum interference device (SQUID) magnetometer in MgB2 using a focused ion beam (FIB) to create Josephson junctions in a 70 nm thick film of MgB2. The SQUID shows a voltage modulation
(deltaV) of 175 mV at a temperature of 10 K and operates over a temperature range from 10 K to 24 K. We find excellent agreement between the measured maximum transfer functions and those predicted by theory. We have measured the magnetic flux noise at 20 K to be as low as 14 micro Phi-0 per root Hz.
Thin superconducting films of magnesium diboride (MgB2) with Tc approx 24K were prepared on various oxide substrates by pulsed laser deposition (PLD) followed by an in-situ anneal. A systematic study of the influence of various in-situ annealing para
meters shows an optimum temperature of about 600C in a background of 0.7 atm. of Ar/4%H2 for layers consisting of a mixture of magnesium and boron. Contrary to ex-situ approaches (e.g. reacting boron films with magnesium vapor at 900C), these films are processed below the decomposition temperature of MgB2. This may prove enabling in the formation of multilayers, junctions, and epitaxial films in future work. Issues related to the improvement of these films and to the possible in-situ growth of MgB2 at elevated temperature are discussed.
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