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تسجيل مستخدم جديدQuantum dots in suspended single-wall carbon nanotubes
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We present a simple technique which uses a self-aligned oxide etch to suspend individual single-wall carbon nanotubes between metallic electrodes. This enables one to compare the properties of a particular nanotube before and after suspension, as well as to study transport in suspended tubes. As an example of the utility of the technique, we study quantum dots in suspended tubes, finding that their capacitances are reduced owing to the removal of the dielectric substrate.
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Transport in suspended metallic single wall carbon nanotubes in the presence of strong electron-electron interaction is investigated. We consider a tube of finite length and discuss the effects of the coupling of the electrons to the deformation pote
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A low energy theory of suspended carbon nanotube quantum dots in weak tunnelling coupling with metallic leads is presented. The focus is put on the dependence of the spectrum and the Franck-Condon factors on the geometry of the junction including sev
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We observe two-fold shell filling in the spectra of closed one-dimensional quantum dots formed in single-wall carbon nanotubes. Its signatures include a bimodal distribution of addition energies, correlations in the excitation spectra for different e
lectron number, and alternation of the spins of the added electrons. This provides a contrast with quantum dots in higher dimensions, where such spin pairing is absent. We also see indications of an additional fourfold periodicity indicative of K-K subband shells. Our results suggest that the absence of shell filling in most isolated nanotube dots results from disorder or nonuniformity.
We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $approx$ 3 nm. We first align narrow gold bow-tie junctions on top of indivi
dual SWCNTs and suspend the devices. We then use a feedback-controlled electromigration to break the gold junctions and expose nm-sized sections of SWCNTs. We measure electron transport in these devices at low temperature and show that they form clean and tunable single-electron transistors. These ultra-short suspended transistors offer the prospect of studying THz oscillators with strong electron-vibron coupling.
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