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We have numerically studied the behavior of one dimensional tunnel junction arrays when random background charges are included using the ``orthodox theory of single electron tunneling. Random background charge distributions are verified in both amplitude and density. The use of a uniform array as a transistor is discussed both with and without random background charges. An analytic expression for the gain near zero gate voltage in a uniform array with no background charges is derived. The gate modulation with background charges present is simulated.
We consider a tunnel junction formed between a fixed electrode and an oscillating one. Accumulation of the charge on the junction capacitor induces a force on the nano-mechanical oscillator. The junction is voltage biased and connected in series with
Coulomb drag and depinning are electronic transport phenomena that occur in low-dimensional nanostructures. Recently, both phenomena have been reported in bilinear Josephson junction arrays. These devices provide a unique opportunity to study the int
Quantum transport through single molecules is very sensitive to the strength of the molecule-electrode contact. When a molecular junction weakly coupled to external electrodes, charging effects do play an important role (Coulomb blockade regime). In
We investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex-situ tunnel barrier is formed by oxidation of the bottom elect
Quantum mechanics and Coulomb interaction dictate the behavior of small circuits. The thermal implications cover fundamental topics from quantum control of heat to quantum thermodynamics, with prospects of novel thermal machines and an ineluctably gr