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This paper presents an analytic model of one dimensional magnetostriction. We show how specific assumptions regarding the symmetry of key micromagnetic energies (magnetocrystalline, magnetoelastic, and Zeeman) reduce a general three-dimensional statistical mechanics model to a one-dimensional form with an exact solution. We additionally provide a useful form of the analytic equations to help ensure numerical accuracy. Numerical results show that the model maintains accuracy over a large range of applied magnetic fields and stress conditions extending well outside those produced in standard laboratory conditions. A comparison to experimental data is performed for several magnetostrictive materials. The model is shown to accurately predict the behavior of Terfenol-D, while two compositions of Galfenol are modeled with varying accuracy. To conclude we discuss what conditions facilitate the description of materials with cubic crystalline anisotropy as transversely isotropic, to achieve peak model performance.
A topology optimization method is presented for the design of periodic microstructured materials with prescribed homogenized nonlinear constitutive properties over finite strain ranges. The mechanical model assumes linear elastic isotropic materials,
With many fantastic properties, memristive devices have been proposed as top candidate for next-generation memory and neuromorphic computing chips. Significant research progresses have been made in improving performance of individual memristive devic
This work studies the appearance of a Haldane gap in quasi one-dimensional antiferromagnets in the long wavelength limit, via the nonlinear $sigma$-model. The mapping from the three-dimensional, integer spin Heisenberg model to the nonlinear $sigma$-
We propose a stochastic particle model in (1+1)-dimensions, with one dimension corresponding to rapidity and the other one to the transverse size of a dipole in QCD, which mimics high-energy evolution and scattering in QCD in the presence of both sat
The inferior electrical contact to two-dimensional (2D) materials is a critical challenge for their application in post-silicon very large-scale integrated circuits. Electrical contacts were generally related to their resistive effect, quantified as