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The authors combine acousto-optoelectric and multi-channel photon correlation spectroscopy to probe spatio-temporal carrier dynamics induced by a piezoelectric surface acoustic wave (SAW). The technique is implemented by combining phase-locked optical micro-photoluminescence spectroscopy and simultaneous three-channel time resolved detection. From the recorded time correlated single photon counting data the time transients of individual channels and the second and third order correlation functions are obtained with sub-nanosecond resolution. The method is validated by probing the correlations SAW-driven carrier dynamics between three decay channels of a single polytypic semiconductor nanowire on a conventional LiNbO$_mathrm{3}$ SAW delay line chip. The method can be readily applied to other types of nanosystems and probe SAW-regulated charge state preparation in quantum dots, charge transfer processes in van der Waals heterostructures or other types of hybrid nanoarchitectures.
Acoustic vibrations at the nanoscale (GHz-THz frequencies) and their interactions with electrons, photons and other excitations are the heart of an emerging field in physics: nanophononics. The design of ultrahigh frequency acoustic-phonon transducer
The separation of hot carriers in semiconductors is of interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages for effective hot-carrier separation
Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on
The conducting polymer polyaniline (PANI) has a wide range of optoelectronic applications due to its unique electronic and optical characteristics. Although extensive works have been performed to understand the equilibrium properties, the nature of t
We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current condition