ﻻ يوجد ملخص باللغة العربية
The combination of ferromagnetism and semiconducting behavior offers an avenue for realizing novel spintronics and spin-enhanced thermoelectrics. Here we demonstrate the synthesis of doped and nanocomposite half Heusler Fe$_{1+x}$VSb films by molecular beam epitaxy. For dilute excess Fe ($x < 0.1$), we observe a decrease in the Hall electron concentration and no secondary phases in X-ray diffraction, consistent with Fe doping into FeVSb. Magnetotransport measurements suggest weak ferromagnetism that onsets at a temperature of $T_{c} approx$ 5K. For higher Fe content ($x > 0.1$), ferromagnetic Fe nanostructures precipitate from the semiconducting FeVSb matrix. The Fe/FeVSb interfaces are epitaxial, as observed by transmission electron microscopy and X-ray diffraction. Magnetotransport measurements suggest proximity-induced magnetism in the FeVSb, from the Fe/FeVSb interfaces, at an onset temperature of $T_{c} approx$ 20K.
The electronic, magnetic, thermoelectric, and topological properties of Heusler compounds (composition $XYZ$ or $X_2 YZ$) are highly sensitive to stoichiometry and defects. Here we establish the existence and experimentally map the bounds of a textit
We have studied the electronic structure of Zn$_{0.9}$Fe$_{0.1}$O nano-particles, which have been reported to show ferromagnetism at room temperature, by x-ray photoemission spectroscopy (XPS), resonant photoemission spectroscopy (RPES), x-ray absorp
Electronic correlations are crucial to the low energy physics of metallic systems with localized $d$ and $f$ states; however, their effect on band insulators and semiconductors is typically negligible. Here, we measure the electronic structure of the
Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the s
Epitaxial films of the B20-structure alloy Fe$_{1-y}$Co$_y$Ge were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulk-like values of one Bohr magneton per Fe atom for FeGe to zero for non-magnetic