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It is commonly assumed that photocurrent in two-dimensional systems with centrosymmetric lattice is generated at structural inhomogenities, such as p-n junctions. Here, we study an alternative mechanism of photocurrent generation associated with inhomogenity of the driving electromagnetic field, termed as plasmonic drag. It is associated with direct momentum transfer from field to conduction electrons, and can be characterized by a non-local non-linear conductivity $sigma^{(2)}({bf q},omega)$. By constructing a classical kinetic model of non-linear conductivity with full account of non-locality, we show that it is resonantly enhanced for wave phase velocity coinciding with electron Fermi velocity. The enhancement is interpreted as phase locking between electrons and the wave. We discuss a possible experiment where non-uniform field is created by a propagating graphene plasmon, and find an upper limit of the current responsivity vs plasmon velocity. This limit is set by a competition between resonantly growing $sigma^{(2)}({bf q},omega)$ and diverging kinetic energy of electrons as the wave velocity approaches Fermi velocity.
Collective modes in two-dimensional electron fluids show an interesting response to a background carrier flow. Surface plasmons propagating on top of a flowing Fermi liquid acquire a non-reciprocal character manifest in a $pm k$ asymmetry of mode dis
Dragging of light by moving dielectrics was predicted by Fresnel and verified by Fizeaus celebrated experiments with flowing water. This momentous discovery is among the experimental cornerstones of Einsteins special relativity and is well understood
We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas
Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with gated G/s
Graphene, a two-dimensional honeycomb lattice of carbon atoms, is of great interest in (opto)electronics and plasmonics and can be obtained by means of diverse fabrication techniques, among which chemical vapor deposition (CVD) is one of the most pro