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We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas effect. The amplitude of these oscillations is greatly enhanced as compared to the ratchet effect at zero magnetic field. The direction of the current is determined by the lateral asymmetry which can be controlled by variation of gate potentials in DGG. We also study the dependence of the ratchet current on the orientation of the terahertz electric field (for linear polarization) and on the radiation helicity (for circular polarization). Notably, in the latter case, switching from right- to left-circularly polarized radiation results in an inversion of the photocurrent direction. We demonstrate that most of our observations can be well fitted by the drift-diffusion approximation based on the Boltzmann kinetic equation with the Landau quantization fully encoded in the oscillations of the density of states.
Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed
We report on transport properties of monolayer graphene with a laterally modulated potential profile, employing striped top gate electrodes with spacings of 100 nm to 200 nm. Tuning of top and back gate voltages gives rise to local charge carrier den
Hybrid lateral superlattices composed of a square array of antidots and a periodic one-dimensional magnetic modulation are prepared in $mathrm{Ga[Al]As}$ heterostructures. The two-dimensional electron gases exposed to these superlattices are characte
We study terahertz radiation induced ratchet currents in low dimensional semiconductor structures with a superimposed one-dimensional lateral periodic potential. The periodic potential is produced by etching a grating into the sample surface or depos
Although van der Waals layered transition metal dichalcogenides from transient absorption spectroscopy have successfully demonstrated an ideal carrier multiplication (CM) performance with an onset of nearly 2Eg,interpretation of the CM effect from th