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Stimulated by the recent experiment [F. Ando et al., Nature 584, 373 (2020)], we propose an intrinsic mechanism to cause the superconducting diode effect (SDE). SDE refers to the nonreciprocity of the critical current for the metal-superconductor transition. Among various mechanisms for the critical current, the depairing current is known to be intrinsic to each material and has recently been observed in several superconducting systems. We clarify the temperature scaling of the nonreciprocal depairing current near the critical temperature and point out its significant enhancement at low temperatures. It is also found that the nonreciprocal critical current shows sign reversals upon increasing the magnetic field. These behaviors are understood by the nonreciprocity of the Landau critical momentum and the crossover of the helical superconductivity. The intrinsic SDE unveils the rich phase diagram and functionalities of noncentrosymmetric superconductors.
A superconducting diode is an electronic device that conducts supercurrent and exhibits zero resistance primarily for one direction of applied current. Such a dissipationless diode is a desirable unit for constructing electronic circuits with ultralo
We experimentally investigate the effect of a magnetic field on photon detection in superconducting single-photon detectors. At low fields, the effect of a magnetic field is through the direct modification of the quasiparticle density of states of th
How small superconductors can be? For isolated nanoparticles subject to quantum size effects, P.W. Anderson conjectured in 1959 that superconductivity could only exist when the electronic level spacing $delta$ is smaller than the superconducting gap
When a ferromagnet is placed in contact with a superconductor, owing to incompatible spin order, the Cooper pairs from the superconductor cannot survive more than one or two nanometers inside the ferromagnet. This is confirmed in the measurements of
We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface t