ﻻ يوجد ملخص باللغة العربية
The key factors determining the emission bandwidth of thermally activated delayed fluorescence (TADF) are investi-gated by combining computational and experimental approaches. To achieve high internal quantum efficiencies (IQEs) in metal-free organic light emitting diode via TADF, the first triplet (T1) to first singlet (S1) reverse intersystem crossing (rISC) is promoted by configuring molecules in an electron donor-acceptor (D-A) alternation with a large di-hedral angle, which results in a small energy gap ({Delta}EST) between S1 and T1 levels. This allows for effective non-radiative up-conversion of triplet excitons to singlet excitons that fluoresce. However, this traditional molecular de-sign of TADF results in broad emission spectral bands (full-width at half-maximum = 70-100 nm). Despite reports suggesting that suppressing the D-A dihedral rotation narrows the emission band, the origin of emission broadening remains elusive. Indeed, our results suggest that the intrinsic TADF emission bandwidth is primarily determined by the charge transfer character of the molecule, rather than its propensity for rotational motion, which offers a renewed perspective on the rational molecular design of organic emitters exhibiting sharp emission spectra.
A quantum chemistry study of the first singlet (S1) and triplet (T1) excited states of phenylsulfonyl-carbazole compounds, proposed as useful thermally activated delayed fluorescence (TADF) emitters for organic light emitting diode (OLED) application
The impact parameter dependence of color charge correlators in the proton is obtained from the light front formalism in light cone gauge. We include NLO corrections due to the $|qqqgrangle$ Fock state via light-cone perturbation theory. Near the cent
Continuous-variable quantum key distribution employs the quadratures of a bosonic mode to establish a secret key between two remote parties, and this is usually achieved via a Gaussian modulation of coherent states. The resulting secret key rate depe
Density-functional tight binding (DFTB) has become a popular form of approximate density-functional theory (DFT) based upon a minimal valence basis set and neglect of all but two center integrals. We report the results of our tests of a recent long-r
Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum information processing. There is strong interest to develop high-quality QEs in III-nitride semiconductors because of their sophisticated manufacturing driven by large and g