ترغب بنشر مسار تعليمي؟ اضغط هنا

Extremely large magnetoresistance from electron-hole compensation in the nodal loop semimetal ZrP$_2$

186   0   0.0 ( 0 )
 نشر من قبل J\\\"orn Bannies
 تاريخ النشر 2021
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Several early transition metal dipnictides have been found to host topological semimetal states and exhibit large magnetoresistance. In this study, we use angle-resolved photoemission spectroscopy (ARPES) and magneto-transport to study the electronic properties of a new transition metal dipnictide ZrP$_2$. We find that ZrP$_2$ exhibits an extremely large and unsaturated magnetoresistance of up to 40,000 % at 2 K, which originates from an almost perfect electron-hole compensation. Our band structure calculations further show that ZrP$_2$ hosts a topological nodal loop in proximity to the Fermi level. Based on the ARPES measurements, we confirm the results of our calculations and determine the surface band structure. Our study establishes ZrP$_2$ as a new platform to investigate near-perfect electron-hole compensation and its interplay with topological band structures.



قيم البحث

اقرأ أيضاً

Electron-hole (e-h) compensation is a hallmark of multi-band semimetals with extremely large magnetoresistance (XMR) and has been considered to be the basis for XMR. Recent spectroscopic experiments, however, reveal that YSb with non-saturating magne toresistance is uncompensated, questioning the e-h compensation scenario for XMR. Here we demonstrate with magnetoresistivity and angle dependent Shubnikov - de Haas (SdH) quantum oscillation measurements that YSb does have nearly perfect e-h compensation, with a density ratio of $0.95$ for electrons and holes. The density and mobility anisotropy of the charge carriers revealed in the SdH experiments allow us to quantitatively describe the magnetoresistance with an anisotropic multi-band model that includes contributions from all Fermi pockets. We elucidate the role of compensated multi-bands in the occurrence of XMR by demonstrating the evolution of calculated magnetoresistances for a single band and for various combinations of electron and hole Fermi pockets.
143 - Yongkang Luo , H. Li , Y. M. Dai 2015
We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase of the hole density below $sim$160~K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50~K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50~K, which might be the direct driving force of the electron-hole ``compensation and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system.
Transition-metal dichalcogenides (WTe$_2$ and MoTe$_2$) have drawn much attention, recently, because of the nonsaturating extremely large magnetoresistance (XMR) observed in these compounds in addition to the predictions of likely type-II Weyl semime tals. Contrary to the topological insulators or Dirac semimetals where XMR is linearly dependent on the field, in WTe$_2$ and MoTe$_2$ the XMR is nonlinearly dependent on the field, suggesting an entirely different mechanism. Electron-hole compensation has been proposed as a mechanism of this nonsaturating XMR in WTe$_2$, while it is yet to be clear in the case of MoTe$_2$ which has an identical crystal structure of WTe$_2$ at low temperatures. In this paper, we report low-energy electronic structure and Fermi surface topology of MoTe$_2$ using angle-resolved photoemission spectrometry (ARPES) technique and first-principle calculations, and compare them with that of WTe$_2$ to understand the mechanism of XMR. Our measurements demonstrate that MoTe$_2$ is an uncompensated semimetal, contrary to WTe$_2$ in which compensated electron-hole pockets have been identified, ruling out the applicability of charge compensation theory for the nonsaturating XMR in MoTe$_2$. In this context, we also discuss the applicability of the existing other conjectures on the XMR of these compounds.
250 - R. Lou , Y. F. Xu , L.-X. Zhao 2017
While recent advances in band theory and sample growth have expanded the series of extremely large magnetoresistance (XMR) semimetals in transition metal dipnictides $TmPn_2$ ($Tm$ = Ta, Nb; $Pn$ = P, As, Sb), the experimental study on their electron ic structure and the origin of XMR is still absent. Here, using angle-resolved photoemission spectroscopy combined with first-principles calculations and magnetotransport measurements, we performed a comprehensive investigation on MoAs$_2$, which is isostructural to the $TmPn_2$ family and also exhibits quadratic XMR. We resolve a clear band structure well agreeing with the predictions. Intriguingly, the unambiguously observed Fermi surfaces (FSs) are dominated by an open-orbit topology extending along both the [100] and [001] directions in the three-dimensional Brillouin zone. We further reveal the trivial topological nature of MoAs$_2$ by bulk parity analysis. Based on these results, we examine the proposed XMR mechanisms in other semimetals, and conclusively ascribe the origin of quadratic XMR in MoAs$_2$ to the carriers motion on the FSs with dominant open-orbit topology, innovating in the understanding of quadratic XMR in semimetals.
Extremely large magnetoresistance (XMR) was recently discovered in many non-magnetic materials, while its underlying mechanism remains poorly understood due to the complex electronic structure of these materials. Here, we report an investigation of t he $alpha$-phase WP$_2$, a topologically trivial semimetal with monoclinic crystal structure (C2/m), which contrasts to the recently discovered robust type-II Weyl semimetal phase in $beta$-WP$_2$. We found that $alpha$-WP$_2$ exhibits almost all the characteristics of XMR materials: the near-quadratic field dependence of MR, a field-induced up-turn in resistivity following by a plateau at low temperature, which can be understood by the compensation effect, and high mobility of carriers confirmed by our Hall effect measurements. It was also found that the normalized MRs under different magnetic fields has the same temperature dependence in $alpha$-WP$_2$, the Kohler scaling law can describe the MR data in a wide temperature range, and there is no obvious change in the anisotropic parameter $gamma$ value with temperature. The resistance polar diagram has a peanut shape when field is rotated in $textit{ac}$ plane, which can be understood by the anisotropy of Fermi surface. These results indicate that both field-induced-gap and temperature-induced Lifshitz transition are not the origin of up-turn in resistivity in the $alpha$-WP$_2$ semimetal. Our findings establish $alpha$-WP$_2$ as a new reference material for exploring the XMR phenomena.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا