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We report a single-shot-based projective readout of a semiconductor hybrid qubit formed by three electrons in a GaAs double quantum dot. Voltage-controlled adiabatic transitions between the qubit operations and readout conditions allow high-fidelity mapping of quantum states. We show that a large ratio both in relaxation time vs. tunneling time (~ 50) and singlet-triplet splitting vs. thermal energy (~ 20) allow energy-selective tunneling-based spin-to-charge conversion with readout visibility ~ 92.6%. Combined with ac driving, we demonstrate high visibility coherent Rabi and Ramsey oscillations of a hybrid qubit in GaAs. Further, we discuss the generality of the method for use in other materials, including silicon.
The future development of quantum information using superconducting circuits requires Josephson qubits [1] with long coherence times combined to a high-fidelity readout. Major progress in the control of coherence has recently been achieved using circ
The future development of quantum information using superconducting circuits requires Josephson qubits with long coherence times combined to a high-delity readout. Major progress in the control of coherence has recently been achieved using circuit qu
Quantum dot hybrid qubits formed from three electrons in double quantum dots represent a promising compromise between high speed and simple fabrication for solid state implementations of single qubit and two qubits quantum logic ports. We derive the
A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin exchange in
The negatively-charged silicon-vacancy (SiV$^-$) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and deterministi