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تسجيل مستخدم جديدLasing in Group-IV materials
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Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence, optical signal processing, where complex photonic integration is to be combined with large-volume fabrication. However, silicon photonics does not yet cover a large portion of applications in the mid-IR. In the 2 to 5 um wavelength range, environmental sensing, life sensing, and security all rely on optical signatures of molecular vibrations to identify complex individual chemical species. The markets for such analysis are huge and constantly growing, with a push for sensitivity, specificity, compactness, low-power operation and low cost. An all-group-IV, CMOS-compatible mid-IR integrated photonic platform would be a key enabler in this wavelength range. As for other wavelengths, such a platform should be complete with low-loss guided interconnects, detectors, modulators, eventually, and most importantly efficient and integrated light sources. This chapter reviews recent developments in the fields of mid-IR silicon-compatible optically and electrically pumped lasers, light emitting diodes and photodetectors based on Ge, GeSn and SiGeSn alloys. It contains insights into the fundamentals of these developments, including band structure modelling, material growth and processing techniques.
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Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of silicon-based microelectronics. However, the la
ck of practical and low-cost silicon-based monolithic light sources such as light-emitting diodes and, in particular, lasers is the main bottleneck for silicon photonics to become the key technology of the 21st century. After briefly reviewing the state of the art regarding silicon-based light-emitters, we discuss the challenges and benefits of a highly flexible approach: The epitaxial incorporation of group-IV nanostructures into crystalline silicon. We argue that a paradigm change for group-IV quantum dots (QDs) can be achieved by the intentional incorporation of extended point defects inside the QDs upon low energy ion implantation. The superior light-emission properties from such defect-enhanced quantum dots (DEQDs), our present understanding of their structural formation and light-emission mechanisms will be discussed. We will show that useful electrically-driven devices, such as light-emitting diodes (LEDs) can be fabricated employing optically active DEQD-material. These LEDs exhibit exceptional temperature-stability of their light emission properties even up to 100{deg}C, unprecedented for purely group-IV-based optoelectronic devices. Thereafter, we will assess the superior temperature stability of the structural properties of DEQDs upon thermal annealing, the scalability of the light-emission with the DEQD density and passivation schemes to further improve the optical properties. The chapter ends with a discussion of future research directions that will spark the development of this exciting field even further.
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band stru
cture directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 % to 10.5 %. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-SI{8 }{micrometer} range. We evidence direct band gap in GeSn with 7 % of Sn and lasing at 2-SI{2.3 }{micrometer} wavelength under optical injection with reproducible lasing thresholds around SI{10 }{kilowattpersquarecentimeter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.
Materials with a zero refractive index support electromagnetic modes that exhibit stationary phase profiles. While such materials have been realized across the visible and near-infrared spectral range, radiative and dissipative optical losses have hi
ndered their development. We reduce losses in zero-index, on-chip photonic crystals by introducing high-Q resonances via resonance-trapped and symmetry-protected states. Using these approaches, we experimentally obtain quality factors of 2.6*10^3 and 7.8*10^3 at near-infrared wavelengths, corresponding to an order-of-magnitude reduction in propagation loss over previous designs. Our work presents a viable approach to fabricate zero-index on-chip nanophotonic devices with low-loss.
Diamond photonics is an ever growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field been shaped by the nitroge
n-vacancy (NV) centre both with breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged. They are M V colour centres, where M indicates one of the elements in the IV column of the periodic table Si, Ge, Sn and Pb, and V indicates lattice vacancies, i.e. missing next-neighbour carbon atoms. These centres exhibit a much stronger emission into the zero phonon line then the NV centre, they display inversion symmetry, and can be engineered using ion implantation all attractive features for scalable quantum photonic architectures based on solid-state, single-photon sources. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art of group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.
Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation and wide-gamut color printing applications. Despite recent advances, most demonstrations of these s
tructure-dependent colors lack post-fabrication tunability that hinders their applicability for front-end dynamic display technologies. Phase-change materials (PCMs), with significant contrast of their optical properties between their amorphous and crystalline states, have demonstrated promising potentials in reconfigurable nanophotonics. Herein, we leverage a tunable all-dielectric reflective metasurface made of a newly emerged class of low-loss optical PCMs with superb characteristics, i.e., antimony trisulphide (Sb$_2$S$_3$), antimony triselenide (Sb$_2$Se$_3$), and binary germanium-doped selenide (GeSe$_3$), to realize switchable, high-saturation, high-efficiency and high-resolution structural colors. Having polarization sensitive building blocks, the presented metasurface can generate two different colors when illuminated by two orthogonally polarized incident beams. Such degrees of freedom (i.e., structural state and polarization) enable a single reconfigurable metasurface with fixed geometrical parameters to generate four distinct wide-gamut colors suitable for a wide range of applications, including tunable full-color printing and displays, information encryption, and anti-counterfeiting.
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