اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدHigh-efficiency magnetism modulation of a single Co3Sn2S2 layer directly by current
111
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Flexible manipulation of local magnetic configurations on the sub-micro scale has long been a pursuit in the field of magnetism science owing to its potential applications in future spintronic devices. This goal can be achieved by using current-induced spin torque to drive the magnetic domain walls. However, the current density threshold of 10^6-10^8 A/cm^2 in metallic systems induced by intrinsic and extrinsic pinning effects increases the energy consumption of the device and limits its application. The marriage between magnetism and topology opens a door for efficient magnetism manipulation, but to date, complex structures (such as multilayer film structures) are still required. Here, we report a unique process of magnetism modulation in the recently discovered magnetic Weyl semimetal Co3Sn2S2 through current-assisted domain wall depinning. Non-adiabatic spin-transfer torques, which are induced by current and significantly modulated by the linear dispersion of Weyl fermions, impose on the local magnetic moments inside the domain walls, leading to a greatly improved efficiency of domain wall motion in magnetic Weyl semimetals compared with conventional metals. By analysing the changes of hysteresis loops under different DC currents, a low current threshold of 1.5*10^5 A/cm^2, and two orders of magnitude improvement of depinning efficiency are obtained in this single material layer. The high efficiency to drive domain walls by current suggests that magnetic Weyl semimetal is a hopeful material system for realizing low-energy consumption spintronic devices.
قيم البحث
اقرأ أيضاً
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial f
or overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500~keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14~keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current.
Quantum conductance calculations on the mechanically deformed monolayers of MoS$_2$ and WS$_2$ were performed using the non-equlibrium Greens functions method combined with the Landauer-B{u}ttiker approach for ballistic transport together with the de
nsity-functional based tight binding (DFTB) method. Tensile strain and compression causes significant changes in the electronic structure of TMD single layers and eventually the transition semiconductor-metal occurs for elongations as large as ~11% for the 2D-isotropic deformations in the hexagonal structure. This transition enhances the electron transport in otherwise semiconducting materials.
We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almo
st constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant field of ~20 Oe is sufficient to realize the fully switching. The SOT effective field decreases and undergoes a sign change with the decrease of the Tb-concentration, implying that a combination of the spin Hall effect from both Co and Tb as well as an asymmetric spin current absorption accounts for the SOT switching mechanism. Our findings would advance the use of magnetic materials with bulk PMA for energy-efficient and thermal-stable non-volatile memories, and add a different dimension for understanding the ordering and asymmetry in amorphous thin films.
We report the first demonstration of the current-induced magnetization switching in a perpendicularly magnetized A1 CoPt single layer. We show that good perpendicular magnetic anisotropy can be obtained in a wide composition range of the A1 Co1-xPtx
single layers, which allows to fabricate perpendicularly magnetized CoPt single layer with composition gradient to break the inversion symmetry of the structure. By fabricating the gradient CoPt single layer, we have evaluated the SOT efficiency and successfully realized the SOT-induced magnetization switching. Our study provides an approach to realize the current-induced magnetization in the ferromagnetic single layers without attaching SOT source materials.
Anomalous Hall effect (AHE) can be induced by intrinsic mechanism due to the band Berry phase and extrinsic one arising from the impurity scattering. The recently discovered magnetic Weyl semimetal Co3Sn2S2 exhibits a large intrinsic anomalous Hall c
onductivity (AHC) and a giant anomalous Hall angle (AHA). The predicted energy dependence of the AHC in this material exhibits a plateau at 1000 {Omega}-1 cm-1 and an energy width of 100 meV just below EF, thereby implying that the large intrinsic AHC will not significantly change against small-scale energy disturbances such as slight p-doping. Here, we successfully trigger the extrinsic contribution from alien-atom scattering in addition to the intrinsic one of the pristine material by introducing a small amount of Fe dopant to substitute Co in Co3Sn2S2. Our experimental results show that the AHC and AHA can be prominently enhanced up to 1850 {Omega}-1 cm-1 and 33%, respectively, owing to the synergistic contributions from the intrinsic and extrinsic mechanisms as distinguished by the TYJ model. In particular, the tuned AHA holds a record value in low fields among known magnetic materials. This study opens up a pathway to engineer giant AHE in magnetic Weyl semimetals, thereby potentially advancing the topological spintronics/Weyltronics.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
