اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدCapping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface
66
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Understanding the superconductivity at the interface of FeSe/SrTiO3 is a problem of great contemporary interest due to the significant increase in critical temperature (Tc) compared to that of bulk FeSe, as well as the possibility of an unconventional pairing mechanism and topological superconductivity. We report a study of the influence of a capping layer on superconductivity in thin films of FeSe grown on SrTiO3 using molecular beam epitaxy. We used in vacuo four-probe electrical resistance measurements and ex situ magneto-transport measurements to examine the effect of three capping layers that provide distinctly different charge transfer into FeSe: compound FeTe, non-metallic Te, and metallic Zr. Our results show that FeTe provides an optimal cap that barely influences the inherent Tc found in pristine FeSe/SrTiO3, while the transfer of holes from a non-metallic Te cap completely suppresses superconductivity and leads to insulating behavior. Finally, we used ex situ magnetoresistance measurements in FeTe-capped FeSe films to extract the angular dependence of the in-plane upper critical magnetic field. Our observations reveal an almost isotropic in-plane upper critical field, providing insight into the symmetry and pairing mechanism of high temperature superconductivity in FeSe.
قيم البحث
اقرأ أيضاً
In paired Fermi systems, strong many-body effects exhibit in the crossover regime between the Bardeen-Cooper-Schrieffer (BCS) and the Bose-Einstein condensation (BEC) limits. The concept of the BCS-BEC crossover, which is studied intensively in the r
esearch field of cold atoms, has been extended to condensed matters. Here, by analyzing the typical superconductors within the BCS-BEC phase diagram, we find that FeSe-based superconductors are prone to shift their positions in the BCS-BEC crossover regime by charge doping or substrate substitution, since their Fermi energies and the superconducting gap sizes are comparable. Especially at the interface of a single-layer FeSe on SrTiO3 substrate, the superconductivity is relocated closer to the crossover unitary than other doped FeSe-based materials, indicating that the pairing interaction is effectively modulated. We further show that hole-doping can drive the interfacial system into the phase with possible pre-paired electrons, demonstrating its flexible tunability within the BCS-BEC crossover regime.
In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface. Here we stud
y experimentally and theoretically the (111) SrTiO3/LaAlO3 interface where a critical thickness, tc, of nine epitaxial LaAlO3 ML is required to turn the interface from insulating to conducting and even superconducting. We show that tc decreases to 3ML when depositing a cobalt over-layer (capping) and 6ML for platinum capping. The latter result contrasts with the (100) interface, where platinum capping increases tc beyond the bare interface. The observed threshold for conductivity for the bare and the metal-capped interfaces is confirmed by our density functional theory calculations. Interestingly, for (111) SrTiO3/LaAlO3/Metal interfaces, conductivity appears concomitantly with superconductivity in contrast with the (100) SrTiO3/LaAlO3/Metal interfaces where tc is smaller than the critical thickness for superconductivity. We attribute this dissimilarity to the different orbital polarization of eg for the (111) versus dxy for the (001) interface.
Single-layer FeSe films grown on the SrTiO3 substrate (FeSe/STO) have attracted much attention because of their possible record-high superconducting critical temperature Tc and distinct electronic structures in iron-based superconductors. However, it
has been under debate on how high its Tc can really reach due to the inconsistency of the results obtained from the transport, magnetic and spectroscopic measurements. Here we report spectroscopic evidence of superconductivity pairing at 83 K in single-layer FeSe/STO films. By preparing high-quality single-layer FeSe/STO films, we observe for the first time strong superconductivity-induced Bogoliubov back-bending bands that extend to rather high binding energy ~100 meV by high-resolution angle-resolved photoemission measurements. The Bogoliubov back-bending band provides a new definitive benchmark of superconductivity pairing that is directly observed up to 83 K in the single-layer FeSe/STO films. Moreover, we find that the superconductivity pairing state can be further divided into two temperature regions of 64-83 K and below 64 K. We propose the 64-83 K region may be attributed to superconductivity fluctuation while the region below 64 K corresponds to the realization of long-range superconducting phase coherence. These results indicate that either Tc as high as 83 K is achievable in iron-based superconductors, or there is a pseudogap formation from superconductivity fluctuation in single-layer FeSe/STO films.
The high temperature superconductivity in single-unit-cell (1UC) FeSe on SrTiO3 (STO)(001) and the observation of replica bands by angle-resolved photoemission spectroscopy (ARPES) have led to the conjecture that the coupling between FeSe electron an
d the STO phonon is responsible for the enhancement of Tc over other FeSe-based superconductors1,2. However the recent observation of a similar superconducting gap in FeSe grown on the (110) surface of STO raises the question of whether a similar mechanism applies3,4. Here we report the ARPES study of the electronic structure of FeSe grown on STO(110). Similar to the results in FeSe/STO(001), clear replica bands are observed. We also present a comparative study of STO (001) and STO(110) bare surfaces, where photo doping generates metallic surface states. Similar replica bands separating from the main band by approximately the same energy are observed, indicating this coupling is a generic feature of the STO surfaces and interfaces. Our findings suggest that the large superconducting gaps observed in FeSe films grown on two different STO surface terminations are likely enhanced by a common coupling between FeSe electrons and STO phonons.
The latest discovery of possible high temperature superconductivity in the single-layer FeSe film grown on a SrTiO3 substrate, together with the observation of its unique electronic structure and nodeless superconducting gap, has generated much atten
tion. Initial work also found that, while the single-layer FeSe/SrTiO3 film exhibits a clear signature of superconductivity, the double-layer FeSe/SrTiO3 film shows an insulating behavior. Such a dramatic difference between the single-layer and double-layer FeSe/SrTiO3 films is surprising and the underlying origin remains unclear. Here we report our comparative study between the single-layer and double-layer FeSe/SrTiO3 films by performing a systematic angle-resolved photoemission study on the samples annealed in vacuum. We find that, like the single-layer FeSe/SrTiO3 film, the as-prepared double-layer FeSe/SrTiO3 film is insulating and possibly magnetic, thus establishing a universal existence of the magnetic phase in the FeSe/SrTiO3 films. In particular, the double-layer FeSe/SrTiO3 film shows a quite different doping behavior from the single-layer film in that it is hard to get doped and remains in the insulating state under an extensive annealing condition. The difference originates from the much reduced doping efficiency in the bottom FeSe layer of the double-layer FeSe/SrTiO3 film from the FeSe-SrTiO3 interface. These observations provide key insights in understanding the origin of superconductivity and the doping mechanism in the FeSe/SrTiO3 films. The property disparity between the single-layer and double-layer FeSe/SrTiO3 films may facilitate to fabricate electronic devices by making superconducting and insulating components on the same substrate under the same condition.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
