ترغب بنشر مسار تعليمي؟ اضغط هنا

Tunable critical field in Rashba superconductor thin-films

153   0   0.0 ( 0 )
 نشر من قبل Linde Olde Olthof
 تاريخ النشر 2020
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The upper critical field in type II superconductors is limited by the Pauli paramagnetic limit. In superconductors with strong Rashba spin-orbit coupling this limit can be overcome by forming a helical state. Here we quantitatively study the magnetic field-temperature phase diagram of finite-size superconductors with Rashba spin-orbit coupling. We discuss the effect of finite size and shape anisotropy. We demonstrate that the critical field is controllable by intrinsic parameters such as spin-orbit coupling strength and tunable parameters such as sample geometry and applied field direction. Our study opens new avenues for the design of superconducting spin-valves.



قيم البحث

اقرأ أيضاً

84 - M. Uchida , M. Ide , M. Kawamura 2019
We report large enhancement of upper critical field Hc2 observed in superconducting Sr2RuO4 thin films. Through dimensional crossover approaching two dimensions, Hc2 except the in-plane field direction is dramatically enhanced compared to bulks, foll owing a definite relation distinct from bulk one between Hc2 and the transition temperature. The anomalous enhancement of Hc2 is highly suggestive of important changes of the superconducting properties, possibly accompanied with rotation of the triplet d-vector. Our findings will become a crucial step to further explore exotic properties by employing Sr2RuO4 thin films.
We study theoretically orbital effects of a parallel magnetic field applied to a disordered superconducting film. We find that the field reduces the phase stiffness and leads to strong quantum phase fluctuations driving the system into an insulating behavior. This microscopic model shows that the critical field decreases with the sheet resistance, in agreement with recent experimental results. The predictions of this model can be used to discriminate spin and orbital effects. We find that experiments conducted by A. Johansson textit{et al.} are more consistent with the orbital mechanism.
We calculate the effect of a static electric field on the superconductive critical temperature of Indium thin films in the framework of proximity effect Eliashberg theory, in order to explain 60 years old experimental data. Since in the theoretical m odel we employ all quantities of interest can be computed ab-initio (i.e. electronic densities of states, Fermi energy shifts and Eliashberg spectral functions), the only free parameter is in general the thickness of the surface layer where the electric field acts. However, in the weak electrostatic field limit Thomas-Fermi approximation is still valid and therefore no free parameters are left, as this perturbed layer is known to have a thickness of the order of the Thomas-Fermi screening length. We show that the theoretical model can reproduce experimental data, even when the magnitude of the induced charge densities are so small to be usually neglected.
Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 mWcm and Tc from 29.5 to 38.8 K were measured up to 28 T. Hc2(T) curves present a linear behavior towards low temperatures. Very high critical field values h ave been found, up to 24 T along the c-axis and 57 T in the basal plane not depending on the normal state resistivity values. In this paper, critical fields will be analyzed taking into account the multiband nature of MgB2; we will show that resistivity and upper critical fields can be ascribed to different scattering mechanisms.
98 - Y. Fang , D. H. Xie , W. Zhang 2015
Various Fe-vacancy orders have been reported in tetragonal Fe1-xSe single crystals and nanowires/nanosheets, which are similar to those found in alkali metal intercalated A1-xFe2-ySe2 superconductors. Here we report the in-situ angle-resolved photoem ission spectroscopy study of Fe-vacancy disordered and ordered phases in FeSe multi-layer thin films grown by molecular beam epitaxy. Low temperature annealed FeSe films are identified to be Fe-vacancy disordered phase and electron doped. Further long-time low temperature anneal can change the Fe-vacancy disordered phase to ordered phase, which is found to be semiconductor/insulator with (root 5) x (root 5) superstructure and can be reversely changed to disordered phase with high temperature anneal. Our results reveal that the disorder-order transition in FeSe thin films can be simply tuned by vacuum anneal and the (root 5) x (root 5) Fe-vacancy ordered phase is more likely the parent phase of FeSe.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا