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Two-dimensional (2D) ferromagnetic (FM) semiconductors with high Curie temperature have long been pursued for electronic and spintronic applications. Here we provide a general strategy to achieve robust FM state in bilayer CrI3 of the monoclinic stacking, which intrinsically has interlayer antiferromagnetic (AFM) order and weak in-plane FM coupling. We showed that the proximity effect from bulk semiconducting substrates induces electronic doping and significantly increases the FM nearest-neighbor exchange for bilayer CrI3, leading to the AFM-to-FM transition for the interlayer spin configuration as well as enhanced intralayer FM coupling. By first-principles calculations and Monte Carlo simulations, bulk and 2D semiconductors providing different interaction strengths from strong covalent bonding to weak van der Waals (vdW) interaction with CrI3 are compared to thoroughly address the substrate effect on magnetic behavior and Curie temperature of bilayer CrI3. These theoretical results offer a facile route for direct synthesis of 2D ferromagnets on proper semiconducting substrates to achieve high Curie temperature for device implementation.
Two-dimensional (2D) ferromagnets with high Curie temperature have long been the pursuit for electronic and spintronic applications. CrI3 is a rising star of intrinsic 2D ferromagnets, however, it suffers from weak exchange coupling. Here we propose
Wurtzite GaN:Mn films on sapphire substrates were successfully grown by use of the molecular beam epitaxy (MBE) system. The film has an extremely high Curie temperature of around 940 K, although the Mn concentration is only about 3 ~ 5 %. Magnetizati
The nature of the often reported room temperature ferromagnetism in transition metal doped oxides is still a matter of huge debate. Herein we report on room temperature ferromagnetism in high quality Co-doped ZnO (Zn1-xCoxO) bulk samples synthesized
Atomically thin transition metal dichalcogenide (TMD) semiconductors hold enormous potential for modern optoelectronic devices and quantum computing applications. By inducing long-range ferromagnetism (FM) in these semiconductors through the introduc
Diverse interlayer tunability of physical properties of two-dimensional layers mostly lies in the covalent-like quasi-bonding that is significant in electronic structures but rather weak for energetics. Such characteristics result in various stacking