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Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical properties that make them attractive for future optoelectronic applications. Integration of TMDCs into practical all-dielectric heterostructures hinges on the ability to passivate and protect them against necessary fabrication steps on large scales. Despite its limited scalability, encapsulation of TMDCs in hexagonal boron nitride (hBN) currently has no viable alternative for achieving high performance of the final device. Here, we show that the novel, ultrathin Ga$_2$O$_3$ glass is an ideal centimeter-scale coating material that enhances optical performance of the monolayers and protects them against further material deposition. In particular, Ga$_2$O$_3$ capping of commercial grade WS$_2$ monolayers outperforms hBN in both scalability and optical performance at room temperature. These properties make Ga$_2$O$_3$ highly suitable for large scale passivation and protection of monolayer TMDCs in functional heterostructures.
Point defects in crystalline materials often occur in multiple charge states. Although many experimental methods to study and explore point defects are available, techniques to explore the non-equilibrium dynamics of the charge states of these defect
The dynamics of exciton formation in transition metal dichalcogenides is difficult to measure experimentally, since many momentum-indirect exciton states are not accessible to optical interband spectroscopy. Here, we combine a tuneable pump, high-har
I use first principles calculations to investigate the thermal conductivity of $beta$-In$_2$O$_3$ and compare the results with that of $alpha$-Al$_2$O$_3$, $beta$-Ga$_2$O$_3$, and KTaO$_3$. The calculated thermal conductivity of $beta$-In$_2$O$_3$ ag
The continuous scaling of semiconductor technology has pushed the footprint of logic devices below 50 nm. Currently, logic standard cells with one single fin are being investigated to increase the integration density, although such options could seve
We introduce a deep-recessed gate architecture in $beta$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped $beta$-Ga$_2$O$_3$ layer a