ﻻ يوجد ملخص باللغة العربية
Understanding carrier creation and evolution in materials initiated by pulsed optical excitation is central to developing ultrafast optoelectronics. We demonstrate herein that the dynamic response of a system can be drastically modified when its physical dimension is reduced to the atomic scale, the ultimate limit of device miniaturization. A comparative study of single-layer (SL) tungsten diselenide(WSe2) relative to bulk WSe2 shows substantial differences in the transient response as measured by time- and angle-resolved photoemission spectroscopy (TRARPES). The conduction-band minimum in bulk WSe2, populated by optical pumping, decays promptly. The corresponding decay for SL WSe2 is much slower and exhibits two time constants. The results indicate the presence of two distinct decay channels in the SL that are correlated with the breaking of space inversion symmetry in the two-dimensional limit. This symmetry breaking lifts the spin degeneracy of the bands, which in turn causes the blockage of decay for one spin channel. The stark contrast between the single layer and the bulk illustrates the basic carrier scattering processes operating at different timescales that can be substantially modified by dimensional and symmetry-reduction effects.
We report the structural and electrical characterization of tungsten oxides formed by illuminating multi-layer tungsten diselenide (WSe2) nanosheets with an intense laser beam in the ambient environment. A noninvasive microwave impedance microscope (
Light emission in atomically thin heterostructures is known to depend on the type of materials, number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in modulating the li
The outstanding optoelectronic and valleytronic properties of transition metal dichalcogenides (TMDs) have triggered intense research efforts by the scientific community. An alternative to induce long-range ferromagnetism (FM) in TMDs is by introduci
We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obt
Understanding defect effect on carrier dynamics is essential for both fundamental physics and potential applications of transition metal dichalcogenides. Here, the phenomenon of oxygen impurities trapping photo-excited carriers has been studied with