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Achieving multiferroic two-dimensional (2D) materials should enable numerous functionalities in nanoscale devices. Until now, however, predicted 2D multiferroics are very few and with coexisting yet only loosely coupled (type-I) ferroelectricity and magnetism. Here, a type-II multiferroic MXene Hf$_{2}$VC$_{2}$F$_{2}$ monolayer is identified, where ferroelectricity originates directly from its magnetism. The noncollinear Y-type spin order generates a polarization perpendicular to the spin helical plane. Remarkably, the multiferroic transition is estimated to occur above room temperature. Our investigation should open the door to a new branch of 2D materials for pursuit of intrinsically strong magnetoelectricity.
Two dimensional multiferroics inherit prominent physical properties from both low dimensional materials and magnetoelectric materials, and can go beyond their three dimensional counterparts for their unique structures. Here, based on density function
Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use of their valley index as an alternate state variable. Several limitatio
We have studied the longitudinal spin Seebeck effect in a polar antiferromagnet $alpha$-Cu$_{2}$V$_{2}$O$_{7}$ in contact with a Pt film. Below the antiferromagnetic transition temperature of $alpha$-Cu$_{2}$V$_{2}$O$_{7}$, spin Seebeck voltages whos
Electric current has been experimentally demonstrated to be able to drive the insulator-to-metal transition (IMT) in VO$_2$. The main mechanisms involved are believed to be the Joule heating effect and the strong electron-correlation effect. These ef
Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers of transiti