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Magnetic skyrmions are topologically protected spin textures, stabilised in systems with strong Dzyaloshinskii-Moriya interaction (DMI). Several studies have shown that electrical currents can move skyrmions efficiently through spin-orbit torques. While promising for technological applications, current-driven skyrmion motion is intrinsically collective and accompanied by undesired heating effects. Here we demonstrate a new approach to control individual skyrmion positions precisely, which relies on the magnetic interaction between sample and a magnetic force microscopy (MFM) probe. We investigate perpendicularly magnetised X/CoFeB/MgO multilayers, where for X = W or Pt the DMI is sufficiently strong to allow for skyrmion nucleation in an applied field. We show that these skyrmions can be manipulated individually through the local field gradient generated by the scanning MFM probe with an unprecedented level of accuracy. Furthermore, we show that the probe stray field can assist skyrmion nucleation. Our proof-of-concepts results offer current-free paradigms to efficient individual skyrmion control.
Magnetic skyrmion motion induced by an electric current has drawn much interest because of its application potential in next-generation magnetic memory devices. Recently, unidirectional skyrmion motion driven by an oscillating magnetic field was also
Chiral magnets like MnSi form lattices of skyrmions, i.e. magnetic whirls, which react sensitively to small electric currents j above a critical current density jc. The interplay of these currents with tiny gradients of either the magnetic field or t
Nanoscale magnetic skyrmions are considered as potential information carriers for future spintronics memory and logic devices. Such applications will require the control of their local creation and annihilation, which involves so far solutions that a
Diffusion of particles has wide repercussions ranging from particle-based soft matter systems to solid state systems with particular electronic properties. Recently, in the field of magnetism, diffusion of magnetic skyrmions, topologically stabilized
Magnetic skyrmions are of considerable interest for low-power memory and logic devices because of high speed at low current and high stability due to topological protection. We propose a skyrmion field-effect transistor based on a gate-controlled Dzy