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We simulate the switching behavior of nanoscale synthetic antiferromagnets (SAFs), inspired by recent experimental progress in spin-orbit-torque switching of crystal antiferromagnets. The SAF consists of two ferromagnetic thin films with in-plane biaxial anisotropy and interlayer exchange coupling. Staggered field-like Rashba spin-orbit torques from the opposite surfaces of the SAF induce a canted net magnetization, which triggers an orthogonal torque that drives 90$^circ$ switching of the Neel vector. Such dynamics driven by the field-like spin-orbit torque allows for faster switching with increased Gilbert damping, without a significant detrimental increase of the threshold switching current density. Our results point to the potential of SAFs as model systems, based on simple ferromagnetic metals, to mimic antiferromagnetic device physics.
It is shown that magnetic states and field-driven reorientation transitions in synthetic antiferromagnets crucially depend on contributions of higher-order anisotropies. A phenomenological macrospin model is derived to describe the magnetic states of
Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. Here we propose how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane picosecond-range magnetic
We investigate the current-induced switching of the Neel order in NiO(001)/Pt heterostructures,which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse resistances are fou
The magnetocaloric effect in exchange-coupled synthetic-antiferromagnet multilayers is investigated experimentally and theoretically. We observe a temperature-controlled inversion of the effect, where the entropy increases on switching the individual
We experimentally study the structure and dynamics of magnetic domains in synthetic antiferromagnets based on Co/Ru/Co films. Dramatic effects arise from the interaction among the topological defects comprising the dual domain walls in these structur