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تسجيل مستخدم جديدIdentifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers
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The charge degree of freedom in solid-state defects fundamentally underpins the electronic spin degree of freedom, a workhorse of quantum technologies. Here we study charge state properties of individual near-surface nitrogen-vacancy (NV) centers in diamond, where NV$^{-}$ hosts the metrologically relevant electron spin. We find that NV$^{-}$ initialization fidelity varies between individual centers and over time, and we alleviate the deleterious effects of reduced NV$^{-}$ initialization fidelity via logic-based initialization. We also find that NV$^{-}$ can ionize in the dark, which compromises spin measurements but is mitigated by measurement protocols we present here. We identify tunneling to a single, local electron trap as the mechanism for ionization in the dark and we develop NV-assisted techniques to control and readout the trap charge state. Our understanding and command of the NVs local electrostatic environment will simultaneously guide materials design and provide novel functionalities with NV centers.
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Shallow nitrogen-vacancy (NV) centers in diamond are promising for nano-magnetometry for they can be placed proximate to targets. To study the intrinsic magnetic properties, zero-field magnetometry is desirable. However, for shallow NV centers under
zero field, the strain near diamond surfaces would cause level anti-crossing between the spin states, leading to clock transitions whose frequencies are insensitive to magnetic signals. Furthermore, the charge noises from the surfaces would induce extra spin decoherence and hence reduce the magnetic sensitivity. Here we demonstrate that the relatively strong hyperfine coupling (130 MHz) from a first-shell 13C nuclear spin can provide an effective bias field to an NV center spin so that the clock-transition condition is broken and the charge noises are suppressed. The hyperfine bias enhances the dc magnetic sensitivity by a factor of 22 in our setup. With the charge noises suppressed by the strong hyperfine field, the ac magnetometry under zero field also reaches the limit set by decoherence due to the nuclear spin bath. In addition, the 130 MHz splitting of the NV center spin transitions allows relaxometry of magnetic noises simultaneously at two well-separated frequencies (~2.870 +/- 0.065 GHz), providing (low-resolution) spectral information of high-frequency noises under zero field. The hyperfine-bias enhanced zero-field magnetometry can be combined with dynamical decoupling to enhance single-molecule magnetic resonance spectroscopy and to improve the frequency resolution in nanoscale magnetic resonance imaging.
We investigate the strain-induced coupling between a nitrogen-vacancy impurity and a resonant vibrational mode of a diamond nanoresonator. We show that under near-resonant laser excitation of the electronic states of the impurity, this coupling can m
odify the state of the resonator and either cool the resonator close to the vibrational ground state or drive it into a large amplitude coherent state. We derive a semi-classical model to describe both effects and evaluate the stationary state of the resonator mode under various driving conditions. In particular, we find that by exploiting resonant single and multi-phonon transitions between near-degenerate electronic states, the coupling to high-frequency vibrational modes can be significantly enhanced and dominate over the intrinsic mechanical dissipation. Our results show that a single nitrogen-vacancy impurity can provide a versatile tool to manipulate and probe individual phonon modes in nanoscale diamond structures.
We investigate the influence of plasma treatments, especially a 0V-bias, potentially low damage O$_2$ plasma as well as a biased Ar/SF$_6$/O$_2$ plasma on shallow, negative nitrogen vacancy (NV$^-$) centers. We ignite and sustain using our 0V-bias pl
asma using purely inductive coupling. To this end, we pre-treat surfaces of high purity chemical vapor deposited single-crystal diamond (SCD). Subsequently, we create $sim$10 nm deep NV$^-$ centers via implantation and annealing. Onto the annealed SCD surface, we fabricate nanopillar structures that efficiently waveguide the photoluminescence (PL) of shallow NV$^-$. Characterizing single NV$^-$ inside these nanopillars, we find that the Ar/SF$_6$/O$_2$ plasma treatment quenches NV$^-$ PL even considering that the annealing and cleaning steps following ion implantation remove any surface termination. In contrast, for our 0V-bias as well as biased O$_2$ plasma, we observe stable NV$^-$ PL and low background fluorescence from the photonic nanostructures.
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