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Predictions state that graphene can spontaneously develop magnetism from the Coulomb repulsion of its $pi$-electrons, but its experimental verification has been a challenge. Here, we report on the observation and manipulation of individual magnetic moments localized in graphene nanostructures on a Au(111) surface. Using scanning tunneling spectroscopy, we detected the presence of single electron spins localized around certain zigzag sites of the carbon backbone via the Kondo effect. Two near-by spins were found coupled into a singlet ground state, and the strength of their exchange interaction was measured via singlet-triplet inelastic tunnel electron excitations. Theoretical simulations demonstrate that electron correlations result in spin-polarized radical states with the experimentally observed spatial distributions. Hydrogen atoms bound to these radical sites quench their magnetic moment, permitting us to switch the spin of the nanostructure using the tip of the microscope.
Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine interaction
Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate
Intense efforts have been made in recent years to realize nonlinear optical interactions at the single-photon level. Much of this work has focused on achieving strong third-order nonlinearities, such as by using single atoms or other quantum emitters
Single-molecule memory device based on a single-molecule magnet (SMM) is one of the ultimate goals of semiconductor nanofabrication technologies. Here, we study how to manipulate and readout the SMMs two spin-state of stored information that characte
Organometallic hexahapto chromium metal complexation of single layer graphene, which involves constructive rehybridization of the graphene pi-system with the vacant chromium d orbital, leads to field effect devices which retain a high degree of the m