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Liquid phase epitaxy of an 18 nm thick Yttrium Iron garnet (YIG) film is achieved. Its magnetic properties are investigated in the 100 -- 400 K temperature range, as well as the influence of a 3 nm thick Pt overlayer on them. The saturation magnetization and the magnetocrystalline cubic anisotropy of the bare YIG film behave similarly to bulk YIG. A damping parameter of only a few $10^{-4}$ is measured, together with a low inhomogeneous contribution to the ferromagnetic resonance linewidth. The magnetic relaxation increases upon decreasing temperature, which can be partly ascribed to impurity relaxation mechanisms. While it does not change its cubic anisotropy, the Pt capping strongly affects the uniaxial perpendicular anisotropy of the YIG film, in particular at low temperatures. The interfacial coupling in the YIG/Pt heterostructure is also revealed by an increase of the linewidth, which substantially grows by lowering the temperature.
We report the nonlocal spin Seebeck effect (nlSSE) in a lateral configuration of Pt/Y$_3$Fe$_5$O$_{12}$(YIG)/Pt systems as a function of the magnetic field $B$ (up to 10 T) at various temperatures $T$ (3 K < $T$ < 300 K). The nlSSE voltage decreases
High quality nanometer-thick (20 nm, 7 nm and 4 nm) epitaxial YIG films have been grown on GGG substrates using pulsed laser deposition. The Gilbert damping coefficient for the 20 nm thick films is 2.3 x 10-4 which is the lowest value reported for su
Magnetocaloric properties of an inhomogeneous magnetic system of a 7.6 nm La${}_{0.7}$Sr${}_{0.3}$MnO${}_{3}$ consisting of superparamagnetic (SPM) with blocking temperature ( $T_B$ = 240 K) and ferromagnetic (FM) phases ( $T_C$ = 290 K) is studied b
Gate-induced modulation of the spin-orbit interaction (SOI) in a 1.5 nm-thick Pd thin film grown on a ferrimagnetic insulator was investigated. Efficient charge accumulation by ionic gating enables a substantial upshift in the Fermi level of the Pd f
A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 {deg}C, respectively. We present a sys