ﻻ يوجد ملخص باللغة العربية
We present a theoretical study of electronic and thermal transport in polycrystalline heterostructures combining graphene (G) and hexagonal boron nitride (hBN) grains of varying size and distribution. By increasing the hBN grain density from a few percents to $100%$, the system evolves from a good conductor to an insulator, with the mobility dropping by orders of magnitude and the sheet resistance reaching the M$Omega$ regime. The Seebeck coefficient is suppressed above $40%$ mixing, while the thermal conductivity of polycrystalline hBN is found to be on the order of $30-120,{rm W}{rm m}^{-1}{rm K}^{-1}$. These results, agreeing with available experimental data, provide guidelines for tuning G-hBN properties in the context of two-dimensional materials engineering. In particular, while we proved that both electrical and thermal properties are largely affected by morphological features (like e.g. by the grain size and composition), we find in all cases that nm-sized polycrystalline G-hBN heterostructures are not good thermoelectric materials.
We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN subst
Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers. Nevertheless, subt
The specific rotational alignment of two-dimensional lattices results in a moire superlattice with a larger period than the original lattices and allows one to engineer the electronic band structure of such materials. So far, transport signatures of
Second-order nonlinear optical response allows to detect different properties of the system associated with the inversion symmetry breaking. Here, we use a second harmonic generation effect to investigate the alignment of a graphene/hexagonal Boron N
We study spin transport in a fully hBN encapsulated monolayer-graphene van der Waals (vdW) heterostructure, at room temperature. A top-layer of bilayer-hBN is used as a tunnel barrier for spin-injection and detection in graphene with ferromagnetic co